- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄354173 > M58MR064D100ZC6T (意法半導(dǎo)體) 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M58MR064D100ZC6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 36/52頁 |
| 文件大小： | 399K |
| 代理商： | M58MR064D100ZC6T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁當(dāng)前第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁
41/52
M58MR064C, M58MR064D
Figure 16. Program Flowchart and Pseudo Code (1)
Note: 1. Status check of b1 (Protected Block), b3 (VPP Invalid) and b4 (Program Error) can be made after each program operation or after
a program sequence.
2. If an error is found, the Status Register must be cleared (CLRS instruction) before further P/E.C. operations.
Write 40h or 10h
Command
AI90102
Start
Write Address
& Data
Read Status
Register
YES
NO
b7 = 1
YES
NO
b3 = 0
NO
b4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
Program instruction:
– write 40h or 10h command
– write Address & Data
(memory enters read status state after
the Program instruction)
do:
– read status register (E or G must be
toggled) if PES instruction given execute
suspend program loop
while b7 = 1
If b3 = 1, VPP invalid error:
– error handler
If b4 = 1, Program error:
– error handler
YES
End
YES
NO
b1 = 0
Program to Protected
Block Error (1, 2)
If b1 = 1, Program to protected block error:
– error handler
Suspend
Loop
NO
YES
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58MR064C120ZC6T | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064D120ZC6T | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032C100ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032D100ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032C120ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58MR064D120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064DZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064-ZCT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58PR001LE | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
| M58PR001LE96ZAC5 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。