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參數(shù)資料
| 型號： | M58MR064D100ZC6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 12/52頁 |
| 文件大小： | 399K |
| 代理商： | M58MR064D100ZC6T |
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M58MR064C, M58MR064D
2/52
Figure 2. TFBGA Connections (Top view through package)
AI90088
VDDQ
ADQ10
ADQ11
ADQ4
ADQ5
VSS
ADQ14
ADQ15
H
ADQ9
ADQ2
ADQ3
ADQ6
ADQ7
VSS
G
A18
WP
RP
BINV
L
A20
A16
VDDQ
F
A19
VPP
W
VDD
K
WAIT
E
8
7
6
5
4
3
2
1
ADQ1
ADQ8
E
A17
ADQ0
G
10
9
ADQ13
ADQ12
VSS
D
C
B
A
DU
12
11
DU
14
13
A21
NC
DESCRIPTION
The M58MR064 is a 64 Mbit non-volatile Flash
memory that may be erased electrically at block
level and programmed in-system on a Word-by-
Word basis using a 1.65V to 2.0V VDD supply for
the circuitry. For Program and Erase operations
the necessary high voltages are generated inter-
nally. The device supports synchronous burst read
and asynchronous read from all the blocks of the
memory array; at power-up the device is config-
ured for page mode read. In synchronous burst
mode, a new data is output at each clock cycle for
frequencies up to 54MHz.
The array matrix organization allows each block to
be erased and reprogrammed without affecting
other blocks. All blocks are protected against pro-
gramming and erase at Power-up.
Blocks can be unprotected to make changes in the
application and then re-protected.
A parameter block "Security block" can be perma-
nently protected against programming and erasing
in order to increase the data security. An optional
12V VPP power supply is provided to speed up the
program phase at costumer production. An inter-
nal command interface (C.I.) decodes the instruc-
tions to access/modify the memory content. The
program/erase controller (P/E.C.) automatically
executes the algorithms taking care of the timings
necessary for program and erase operations. Two
status registers indicate the state of each bank.
Instructions for Read Array, Read Electronic Sig-
nature, Read Status Register, Clear Status Regis-
ter, Write Read Configuration Register, Program,
Block Erase, Bank Erase, Program Suspend, Pro-
gram Resume, Erase Suspend, Erase Resume,
Block Protect, Block Unprotect, Block Locking,
Protection Program, CFI Query, are written to the
memory through a Command Interface (C.I.) using
standard micro-processor write timings.
The memory is offered in TFBGA48, 0.5 mm ball
pitch packages and it is supplied with all the bits
erased (set to ’1’).
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PDF描述 |
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| M58MR064C120ZC6T | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064D120ZC6T | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032C100ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032D100ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032C120ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58MR064D120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064DZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064-ZCT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58PR001LE | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
| M58PR001LE96ZAC5 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
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