參數(shù)資料
型號: M58MR064D100ZC6T
廠商: 意法半導體
英文描述: 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 64兆位4Mb的x16插槽,復用的I / O,雙行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 22/52頁
文件大?。?/td> 399K
代理商: M58MR064D100ZC6T
29/52
M58MR064C, M58MR064D
Figure 9. AC Testing Load Circuit
AI90095
VDDQ / 2
OUT
CL = 30pF
CL includes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Table 24. AC Measurement Conditions
Input Rise and Fall Times
≤ 4ns
Input Pulse Voltages
0toVDDQ
Input and Output Timing Ref. Voltages
VDDQ/2
Figure 8. Testing Input/Output Waveforms
AI90094
VDDQ
0V
VDDQ/2
Table 25. Capacitance (1)
(TA =25°C, f = 1MHz)
Note: 1. Sampled only, not 100% tested.
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input Capacitance
VIN =0V
6pF
COUT
Output Capacitance
VOUT =0V
12
pF
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M58MR064C120ZC6T 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
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