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參數(shù)資料
| 型號(hào)： | M58MR064D100ZC6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 24/52頁 |
| 文件大?。?/td> | 399K |
| 代理商： | M58MR064D100ZC6T |
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M58MR064C, M58MR064D
30/52
Table 26. DC Characteristics
(TA = –40 to 85°C; VDD =VDDQ = 1.65V to 2.0V)
Note: 1. Sampled only, not 100% tested.
2. VPP may be connected to 12V power supply for a total of less than 100 hrs.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VDDQ
±1
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VDDQ
±5
A
ICC1
Supply Current
(Asynchronous Read Mode)
E =VIL,G =VIH, f = 6MHz
10
20
mA
Supply Current
(Synchronous Read Mode
Continuous Burst)
E =VIL,G =VIH, f = 40MHz
20
30
mA
ICC2
Supply Current
(Power-down)
RP =VSS ± 0.2V
210
A
ICC3
Supply Current (Standby)
E =VDD ± 0.2V
15
50
A
ICC4
(1)
Supply Current
(Program or Erase)
Word Program, Block Erase
in progress
10
20
mA
ICC5
(1)
Supply Current
(Dual Bank)
Program/Erase in progress
in one Bank, Asynchronous
Read in the other Bank
20
40
mA
Program/Erase in progress
in one Bank, Synchronous
Read in the other Bank
30
50
mA
IPP1
VPP Supply Current (Program
or Erase)
VPP = 12V ± 0.6V
510
mA
IPP2
VPP Supply Current (Standby
or Read)
VPP ≤ VCC
0.2
5
A
VPP = 12V ± 0.6V
100
400
A
VIL
Input Low Voltage
–0.5
0.4
V
VIH
Input High Voltage
VDDQ –0.4
VDDQ +0.4
V
VOL
Output Low Voltage
IOL = 100A
0.1
V
VOH
Output High Voltage CMOS
IOH = –100A
VDDQ –0.1
V
VPP1
VPP Supply Voltage
Program, Erase
VDDQ –0.4
VDDQ +0.4
V
VPPH
VPP Supply Voltage
Double/Tetra Word Program
11.4
12.6
V
VPPLK
Program or Erase Lockout
1
V
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58MR064D120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064DZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064-ZCT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58PR001LE | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
| M58PR001LE96ZAC5 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
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