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參數(shù)資料
| 型號(hào)： | M58MR064D100ZC6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 34/52頁(yè) |
| 文件大?。?/td> | 399K |
| 代理商： | M58MR064D100ZC6T |
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M58MR064C, M58MR064D
4/52
The architecture includes a 128 bits Protection
register that is divided into two 64-bits segments.
In the first one is written a unique device number,
while the second one is programmable by the us-
er. The user programmable segment can be per-
manently protected programming the bit 1 of the
Protection Lock Register (see protection register
and Security Block). The parameter block (# 0) is
a security block. It can be permanently protected
by the user programming the bit 2 of the Protection
Lock Register.
Block protection against Program or Erase pro-
vides additional data security. All blocks are pro-
tected and unlocked at Power-up. Instructions are
provided to protect or un-protect any block in the
application. A second register locks the protection
status while WP is low (see Block Locking descrip-
tion).
Table3. BankSizeand Sectorization
Bank Size
Parameter Blocks
Main Blocks
Bank A
16 Mbit
8 blocks of 4 KWord
31 blocks of 32 KWord
Bank B
48 Mbit
-
96 blocks of 32 KWord
Figure 3. Memory Map
AI90089
512 Kbit or
32 KWord
000000h
007FFFh
512 Kbit or
32 KWord
3F0000h
3F7FFFh
Top Boot Block
Address lines A21-A0
512 Kbit or
32 KWord
2F8000h
2FFFFFh
Total of 96
Main Blocks
512 Kbit or
32 KWord
300000h
307FFFh
64 Kbit or
4 KWord
3FF000h
3FFFFFh
64 Kbit or
4 KWord
3F8000h
3F8FFFh
Total of 31
Main Blocks
Total of 8
Parameter
Blocks
Bank B
Bank A
64 Kbit or
4 KWord
000000h
000FFFh
512 Kbit or
32 KWord
0F8000h
0FFFFFh
Bottom Boot Block
Address lines A21-A0
64 Kbit or
4 KWord
007000h
007FFFh
Total of 8
Parameter
Blocks
512 Kbit or
32 KWord
008000h
00FFFFh
512 Kbit or
32 KWord
3F8000h
3FFFFFh
512 Kbit or
32 KWord
100000h
107FFFh
Total of 31
Main Blocks
Total of 96
Main Blocks
Bank B
Bank A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58MR064C120ZC6T | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064D120ZC6T | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032C100ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032D100ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032C120ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58MR064D120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064DZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064-ZCT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58PR001LE | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
| M58PR001LE96ZAC5 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
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