參數(shù)資料
型號(hào): K4N26323AE
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128Mbit GDDR2 SDRAM
中文描述: 128Mbit GDDR2 SDRAM的
文件頁(yè)數(shù): 42/52頁(yè)
文件大?。?/td> 826K
代理商: K4N26323AE
- 42 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Temperature (Tj)
Typical 50
°
C
Minimum 100
°
C
Maximum 0
°
C
Vdd/Vddq
Typical
2.5V
Minimum 2.4V
Maximum 2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V)
Typical
Minimum
Maximum
Typical
Minimum
Maximum
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
-14.4
-8.5
-3.2
1.6
5.8
9.5
12.7
15.3
17.5
19.6
21.5
23.3
25.1
26.8
28.6
30.3
32.0
33.7
35.4
37.1
-11.5
-7.1
-3.3
0.2
3.3
5.9
8.2
10.2
11.9
13.5
15.1
16.6
18.1
19.6
21.0
22.4
23.9
25.3
26.7
28.1
-17.1
-9.0
-1.8
4.7
10.4
15.4
19.7
23.1
25.9
28.3
30.5
32.6
34.7
36.7
38.7
40.7
42.7
44.6
46.6
48.5
14.9
9.7
4.8
0.4
-3.7
-7.4
-10.8
-13.7
-16.4
-18.8
-21.0
-23.2
-25.3
-27.3
-29.4
-31.3
-33.3
-35.2
-37.1
-39.0
11.9
8.1
4.6
1.3
-1.7
-4.4
-6.9
-9.2
-11.2
-13.2
-15.0
-16.8
-18.5
-20.2
-21.8
-23.5
-25.1
-26.6
-28.2
-29.8
18.0
11.4
5.1
-0.8
-6.2
-11.2
-15.6
-19.4
-22.6
-25.6
-28.3
-30.9
-33.4
-35.8
-38.1
-40.4
-42.7
-44.9
-47.1
-49.3
相關(guān)PDF資料
PDF描述
K4N26323AE-GC20 128Mbit GDDR2 SDRAM
K4N26323AE-GC22 128Mbit GDDR2 SDRAM
K4N26323AE-GC25 128Mbit GDDR2 SDRAM
K4N56163QF 256Mbit gDDR2 SDRAM
K4N56163QF-GC 256Mbit gDDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4N26323AE-GC20 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM
K4N26323AE-GC22 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM
K4N26323AE-GC25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM
K4N27 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
K4N28 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)