參數(shù)資料
型號(hào)： K4N26323AE
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Mbit GDDR2 SDRAM
中文描述： 128Mbit GDDR2 SDRAM的
文件頁(yè)數(shù)： 4/52頁(yè)
文件大小： 826K
代理商： K4N26323AE
- 4 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
1M x 32Bit x 4 Banks GDDR2 Synchronous DRAM
with Differential Data Strobe
2.5V + 0.1V power supply for device operation
1.8V + 0.1V power supply for I/O interface
On-Die Termination for all inputs except CKE,ZQ
Output Driver Strength adjustment by EMRS
SSTL_18 compatible inputs/outputs
4 banks operation
MRS cycle with address key programs
- CAS latency : 5, 6, 7 (clock)
- Burst length : 4 only
- Burst type : sequential only
Additive latency (AL): 0,1(clock)
Read latency(RL) : CL+AL
Write latency(WL) : AL+1
GENERAL DESCRIPTION
FEATURES
Differential Data Strobes for Data-in, Date out ;
- 4 DQS and /DQS(one differential strobe per byte)
- Single Data Strobes by EMRS.
Edge aligned data & data strobe output
Center aligned data & data strobe input
DM for write masking only
Auto & Self refresh
32ms refresh period (4K cycle)
(16ms is under consideration)
144 Ball FBGA
Maximum clock frequency up to 500MHz
Maximum data rate up to 1Gbps/pin
DLL for Address, CMD and outputs
ORDERING INFORMATION
Part NO.
Max Freq.
Max Data Rate
Interface
Package
K4N26323AE-GC20
500MHz
1000Mbps/pin
SSTL_18
144 Ball FBGA
K4N26323AE-GC22
450MHz
900Mbps/pin
K4N26323AE-GC25
400MHz
800Mbps/pin
The 4Mx32 GDDR2 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,976 words
by 32 bits, fabricated with SAMSUNG
’s
high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 4GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of
operating frequencies, and programmable latencies allow the device to be useful for a variety of high performance memory
system applications.
FOR 1M x 32Bit x 4 Bank GDDR2 SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4N26323AE-GC20 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM
K4N26323AE-GC22 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM
K4N26323AE-GC25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM
K4N27 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
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