參數(shù)資料
型號(hào)： K4N26323AE
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Mbit GDDR2 SDRAM
中文描述： 128Mbit GDDR2 SDRAM的
文件頁(yè)數(shù)： 39/52頁(yè)
文件大小： 826K
代理商： K4N26323AE
- 39 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
IBIS: I/V Characteristics for Input and Output Buffers
The termination resistor of the controller must be set to a appropriate value to satisfy output voltage level if the ODT of DRAM is on.
1. The typical pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The 30 ohm@ODT OFF variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines the of the V-I curve of Figure a.
3. The typical pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The 30 ohm@ODT OFF variation pullup current from minimum to maximum process, temperature and voltage will lie within the
outer bounding lines of the V-I curve of Figrue b.
5. The 30 ohm@ODT OFF variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for
device drain to source voltage from 0 to VDDQ/2
6. The 30 ohm@ODT OFF variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to
source voltages from 0 to VDDQ/2
30 ohm Driver @ ODT OFF
Maximum
Typical
Minumum
Vout(V)
I
Minimum
Typical
Maximum
I
Figure b : PulluP Charateristics
Figure a : Pulldown Charateristics
0
5
10
15
20
25
30
35
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Vout(V)
-35
-30
-25
-20
-15
-10
-5
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
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