參數(shù)資料
型號(hào)： K4N26323AE
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Mbit GDDR2 SDRAM
中文描述： 128Mbit GDDR2 SDRAM的
文件頁(yè)數(shù)： 3/52頁(yè)
文件大?。?/td> 826K
代理商： K4N26323AE
- 3 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Revision 0.5 (January 2002)
- Eliminated DLLEN pin
- Power-up sequence
Revision 0.4 (January 2002)
- Changed EMRS Table
- Changed Self-Refresh exit mode
- Changed On-die Termination Control
- Changed OCD Control method
- Power-up sequence
Revision 0.3 (December 2001)
- Noted the ball names changed from DDR-1 and exchanged DQS and /DQS ball location.
- Added On-die termination control
- Changed OCD align mode entry / exit timing
- Added target value of
Data & DQS input/output capacitance(DQ
0
~DQ
31
)
- Added Table for auto precharge control
- Typo corrected.
Revision 0.2 (November 2001)
- Data Strobe Scheme is changed from DQS separation of Read DQS, Write DQS to Differential and Bi-directional DQS
- OCD adjustment
- Controlled DQ is changed from DQ0, WDQS2 to DQ23, DQS2 and /DQS2
Revision 0.1 (October 2001)
- Data Strobe Scheme is changed from Bi-directional DQS to DQS separation to Read DQS, Write DQS
- Package Ball layout is changed for mirror package.
- OCD adjustment
Controlled DQ is changed from DQ0, DQS0 to DQ23, WDQS2
- Added DM descriptions
- 1bank, 2bank system
- Added System Selection mode in EMRS table.
Revision 0.0 (August 2001)
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4N26323AE-GC20 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM
K4N26323AE-GC22 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM
K4N26323AE-GC25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM
K4N27 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
K4N28 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
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