參數(shù)資料
型號: IDT71T75902S75BGI8
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 1M X 18 ZBT SRAM, 7.5 ns, PBGA119
封裝: 14 X 22 MM, PLASTIC, BGA-119
文件頁數(shù): 7/26頁
文件大?。?/td> 644K
代理商: IDT71T75902S75BGI8
6.42
IDT71T75702, IDT71T75902, 512K x 36, 1M x 18, 2.5V Synchronous ZBT SRAMs with
2.5V I/O, Burst Counter and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
15
AC Electrical Characteristics
(VDD = 2.5V±5%, Commercial and Industrial Temperature Ranges)
NOTES:
1. Measured as HIGH above 0.6VDDQ and LOW below 0.4VDDQ.
2. Transition is measured ±200mV from steady-state.
3. These parameters are guaranteed with the AC load (Figure 1) by device characterization. They are not production tested.
4. To avoid bus contention, the output buffers are designed such that tCHZ (device turn-off) is about 1ns faster than tCLZ (device turn-on) at a given temperature and voltage.
The specs as shown do not imply bus contention because tCLZ is a Min. parameter that is worse case at totally different test conditions (0 deg. C, 2.625V) than tCHZ,
which is a Max. parameter (worse case at 70 deg. C, 2.375V).
7.5ns
8ns
8.5ns
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tCYC
Clock Cycle Time
10
____
10.5
____
11
____
ns
tCH
(1)
Clock High Pulse Width
2.5
____
2.7
____
3.0
____
ns
tCL
(1)
Clock Low Pulse Width
2.5
____
2.7
____
3.0
____
ns
Output Parameters
tCD
Clock High to Valid Data
____
7.5
____
8
____
8.5
ns
tCDC
Clock High to Data Change
2
____
2
____
2
____
ns
tCLZ
(2,3,4)
Clock High to Output Active
3
____
3
____
3
____
ns
tCHZ(2,3,4)
Clock High to Data High-Z
____
5
____
5
____
5ns
tOE
Output Enable Access Time
____
5
____
5
____
5ns
tOLZ
(2,3)
Output Enable Low to Data Active
0
____
0
____
0
____
ns
tOHZ
(2,3)
Output Enable High to Data High-Z
____
5
____
5
____
5ns
Set Up Times
tSE
Clock Enable Setup Time
2.0
____
2.0
____
2.0
____
ns
tSA
Address Setup Time
2.0
____
2.0
____
2.0
____
ns
tSD
Data In Setup Time
2.0
____
2.0
____
2.0
____
ns
tSW
Read/Write (R/
W) Setup Time
2.0
____
2.0
____
2.0
____
ns
tSADV
Advance/Load (ADV/
LD) Setup Time
2.0
____
2.0
____
2.0
____
ns
tSC
Chip Enable/Select Setup Time
2.0
____
2.0
____
2.0
____
ns
tSB
Byte Write Enable (
BWx) Setup Time
2.0
____
2.0
____
2.0
____
ns
Hold Times
tHE
Clock Enable Hold Time
0.5
____
0.5
____
0.5
____
ns
tHA
Address Hold Time
0.5
____
0.5
____
0.5
____
ns
tHD
Data In Hold Time
0.5
____
0.5
____
0.5
____
ns
tHW
Read/Write (R/
W) Hold Time
0.5
____
0.5
____
0.5
____
ns
tHADV
Advance/Load (ADV/
LD) Hold Time
0.5
____
0.5
____
0.5
____
ns
tHC
Chip Enable/Select Hold Time
0.5
____
0.5
____
0.5
____
ns
tHB
Byte Write Enable (
BWx) Hold Time
0.5
____
0.5
____
0.5
____
ns
5319 tbl 24
相關(guān)PDF資料
PDF描述
IDT71V2558XS166BQ 256K X 18 ZBT SRAM, 3.5 ns, PBGA165
IDT71V3576S133BGI 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect
IDT71V3576S133BQ 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect
IDT71V3576S133BQI 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect
IDT71V3576S133PFI 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT71T75902S75PF 功能描述:IC SRAM 18MBIT 75NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標(biāo)準(zhǔn)包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M(128K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA(14x22) 包裝:托盤 其它名稱:71V3557SA75BGI
IDT71T75902S75PF8 功能描述:IC SRAM 18MBIT 75NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標(biāo)準(zhǔn)包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M(128K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA(14x22) 包裝:托盤 其它名稱:71V3557SA75BGI
IDT71T75902S75PFG 功能描述:IC SRAM 18MBIT 75NS 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,異步 存儲容量:128K(8K x 16) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:70V25S15PF
IDT71T75902S75PFG8 功能描述:IC SRAM 18MBIT 75NS 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,異步 存儲容量:128K(8K x 16) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:70V25S15PF
IDT71T75902S75PFGI 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 7.5NS 100TQFP