參數(shù)資料
型號： IDT71T75902S75BGI8
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 1M X 18 ZBT SRAM, 7.5 ns, PBGA119
封裝： 14 X 22 MM, PLASTIC, BGA-119
文件頁數(shù)： 23/26頁
文件大小： 644K
代理商： IDT71T75902S75BGI8
6.42
6
IDT71T75702, IDT71T75902, 512K x 36, 1M x 18, 2.5V Synchronous ZBT SRAMs with
2.5V I/O, Burst Counter and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
TQFP Capacitance
(TA = +25°°°°°C, f = 1.0MHz)
Pin Configuration 1M x 18
NOTES:
1. Pins 14 and 66 do not have to be connected directly to VSS as long as the
input voltage is < VIL.
2. Pin 16 does not have to be connected directly to VDD as long as the input voltage
is > VIH.
3. Pins 38, 39 and 43 will be pulled internally to VDD if not actively driven. To
disable the TAP controller without interfering with normal operation, several
settings are possible. Pins 38, 39 and 43 could be tied to VDD or VSS and
pin 42 should be left unconnected. Or all JTAG inputs (TMS, TDI and TCK)
pins38, 39 and 43 could be left unconnected “NC” and the JTAG circuit will
remain disabled from power up.
4. Pin 43 is reserved for the 36M address. JTAG is not offered in the 100-pin
TQFP package for the 36M ZBT device.
Top View
100 TQFP
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any input or I/O pin cannot exceed VDDQ during power
supply ramp up.
7. During production testing, the case temperature equals TA.
Symbol
Rating
Commercial
Industrial
Unit
VTERM
(2)
Terminal Voltage with
Respect to GND
-0.5 to +3.6
V
VTERM
(3,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD
V
VTERM
(4,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD +0.5
V
VTERM
(5,6)
Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
V
TA
(7)
Operating Ambient
Temperature
0 to +70
-40 to +85
oC
TBIAS
Temperature Under Bias
-55 to +125
oC
TSTG
Storage Temperature
-55 to +125
oC
PT
Power Dissipation
2.0
W
IOUT
DC Output Current
50
mA
5319 tbl 06
Symbol
Parameter
(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
5
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5319 tbl 07
100 999897 9695 9493 9291 90
8786858483 8281
89 88
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
A
6
A
7
C
E
1
C
E
2
N
C
N
C
B
W
2
B
W
1
C
E
2
V
D
V
S
C
LK
R
/W
C
E
N
O
E
A
D
V
/LD
A
19
A
18
A
8
A
9
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
LB
O
A
15
A
14
A
13
A
12
A
11
V
D
V
S
A
0
A
1
A
2
A
3
A
4
A
5
NC
VDDQ
VSS
NC
I/OP2
I/O15
I/O14
VSS
VDDQ
I/O13
I/O12
VSS
VDD
I/O11
I/O10
VDDQ
VSS
I/O9
I/O8
NC
VSS
VDDQ
NC
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
NC
VDDQ
VSS
NC
I/OP1
I/O7
I/O6
VSS
VDDQ
I/O5
I/O4
VSS
VDD
I/O3
I/O2
VDDQ
VSS
I/O1
I/O0
NC
VSS
VDDQ
NC
5319 drw 02a
VSS(1)
NC
VDD(2)
NC
A
16
A
17
NC
VSS(1)
A10
ZZ
,
N
C
/T
C
K
(3
,4
)
N
C
/T
D
O
(3
)
N
C
/T
D
I(3
)
N
C
/T
M
S
(3
)
BGA Capacitance
(TA = +25°°°°°C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5319 tbl 07a
fBGA Capacitance
(TA = +25°°°°°C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5319 tbl 07b
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參數(shù)描述
IDT71T75902S75PF 功能描述:IC SRAM 18MBIT 75NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標(biāo)準(zhǔn)包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M（128K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA（14x22） 包裝:托盤 其它名稱:71V3557SA75BGI
IDT71T75902S75PF8 功能描述:IC SRAM 18MBIT 75NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標(biāo)準(zhǔn)包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M（128K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA（14x22） 包裝:托盤 其它名稱:71V3557SA75BGI
IDT71T75902S75PFG 功能描述:IC SRAM 18MBIT 75NS 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF
IDT71T75902S75PFG8 功能描述:IC SRAM 18MBIT 75NS 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF
IDT71T75902S75PFGI 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 7.5NS 100TQFP
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