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參數(shù)資料
| 型號： | HY27UA081G1M-TIB |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 3.3V PROM, 12000 ns, PDSO48 |
| 封裝： | 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 |
| 文件頁數(shù)： | 8/43頁 |
| 文件大?。?/td> | 729K |
| 代理商： | HY27UA081G1M-TIB |
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Rev 0.5 / Oct. 2004
16
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Figure 12. Sequential Row Read Operation
Figure 13. Sequential Row Read Block Diagrams
Busy
tBLBH1
(Read Busy time)
tBLBH1
Address Inputs
I/O
00h/
01h/50h
1st
Page Output
2nd
Page Output
Nth
Page Output
Command
Code
RB
Area A
(1st half Page)
Area B
Area C
Read A Command, x8 Devices
(2nd half Page) (Spare)
Block
1st Page
2nd Page
Nth Page
Read B Command, x8 Devices
Area A
(1st half Page)
Area B
(2nd half Page)
Area C
(Spare)
Block
1st Page
2nd Page
Nth Page
Area A
Area C
(Spare)
Read A Command, x16 Devices
(main area)
1st Page
2nd Page
Nth Page
Block
Area A
Area A/B
Area C
(Spare)
Read C Command, x8/x16 Devices
1st Page
2nd Page
Nth Page
Block
Area A
(1st half Page)
Area B
Area C
Read A Command, x8 Devices
(2nd half Page) (Spare)
Block
1st Page
2nd Page
Nth Page
Area A
(1st half Page)
Area A
(1st half Page)
Area B
Area C
Read A Command, x8 Devices
(2nd half Page) (Spare)
Block
1st Page
2nd Page
Nth Page
Block
1st Page
2nd Page
Nth Page
Read B Command, x8 Devices
Area A
(1st half Page)
Area B
(2nd half Page)
Area C
(Spare)
Block
1st Page
2nd Page
Nth Page
Read B Command, x8 Devices
Area A
(1st half Page)
Area A
(1st half Page)
Area B
(2nd half Page)
Area C
(Spare)
Block
1st Page
2nd Page
Nth Page
Block
1st Page
2nd Page
Nth Page
Area A
Area C
(Spare)
Read A Command, x16 Devices
(main area)
1st Page
2nd Page
Nth Page
Block
Area A
Area C
(Spare)
Read A Command, x16 Devices
(main area)
1st Page
2nd Page
Nth Page
Block
Area A
Area A/B
Area C
(Spare)
Read C Command, x8/x16 Devices
1st Page
2nd Page
Nth Page
Block
Area A
Area A/B
Area C
(Spare)
Read C Command, x8/x16 Devices
1st Page
2nd Page
Nth Page
Block
1st Page
2nd Page
Nth Page
Block
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27US08121B-TPIS | 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48 |
| HY27US08121B-FIB | 64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63 |
| HY27US081G1MSES | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY27US081G1MTCS | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY27US081G1MTPMP | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27UA161G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UA1G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UAXXX | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
| HY27UF081G2A-C | 制造商:SK Hynix Inc 功能描述: |
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