參數(shù)資料
型號(hào)： HY27UA081G1M-TIB
廠商： HYNIX SEMICONDUCTOR INC
元件分類： PROM
英文描述： 128M X 8 FLASH 3.3V PROM, 12000 ns, PDSO48
封裝： 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
文件頁(yè)數(shù)： 7/43頁(yè)
文件大?。?/td> 729K
代理商： HY27UA081G1M-TIB
Rev 0.5 / Oct. 2004
15
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Note: 1. If tELWL is less than 10ns, tWLWH must be minimum 35ns, otherwise, tWLWH may be minimum 25ns.
Note: 1. Highest address depends on device density.
Figure 10. Read (A, B, C) Operation
Figure 11. Read Block Diagrams
CLE
ALE
I/O
RB
tBLBH1
(read)
00h/
01h/ 50h
Command
Code
Address Input
Data Output (sequentially)
Busy
CE
WE
RE
Area A
(1st half Page)
Area B
(2nd half
Page)
Area C
(Spare)
Read A Command, x8 Devices
A9-A26(1)
A0-A7
Area C
(50h)
Read A Command, x16 Devices
Area A
(main area)
A9-A26(1)
A0-A7
Area A
Area C
(Spare)
Read C Command, x8/x16 Devices
A9-A26(1)
A0-A3 (x8)
A0-A2 (x16)
Area A/B
A4-A7 (x8), A3-A7 (x16) are don't care
Area A
(1st half Page)
Area C
(Spare)
Read B Command, x8 Devices
A9-A26(1)
A0-A7
Area B
(2nd half
Page)
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