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參數(shù)資料
| 型號(hào)： | HY27UA081G1M-TIB |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 3.3V PROM, 12000 ns, PDSO48 |
| 封裝： | 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 |
| 文件頁數(shù)： | 14/43頁 |
| 文件大?。?/td> | 729K |
| 代理商： | HY27UA081G1M-TIB |
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Rev 0.5 / Oct. 2004
21
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Table 6: Status Register Bit
Read Electronic Signature
The device contains a Manufacturer Code and Device Code. To read these codes two steps are required:
1. first use one Bus Write cycle to issue the Read Electronic Signature command (90h)
2. then subsequent Bus Read operations will read the Manufacturer Code and the Device Code until another command
is issued.
Refer to Table, Read Electronic Signature for information on the addresses.
Automatic Page 0 Read at Power-Up
Automatic Page 0 Read at Power-Up is an option available on all devices belonging to the NAND Flash 528 Byte/264
Word Page family. It allows the microcontroller to directly download boot code from page 0, without requiring any
command or address input sequence. The Automatic Page 0 Read option is particularly suited for applications that
boot from the NAND.
Devices delivered with Automatic Page 0 Read at Power-Up can have the Sequential Row Read option either enabled
or disabled.
Bit
NAME
Logic Level
Definition
SR7
Write Protection
'1'
Not Protected
'0'
Protected
SR6
Program/Erase/Read
Controller
'1'
P/E/R C Inactive, device ready
'0'
P/E/R C active, device busy
SR5
Program/ Erase/ Read
Controller
'1'
P/E/R C inactive, device ready
'0'
P/E/R C active, device busy
SR4, SR3, SR2
Reserved
Don
't Care
SR0
Generic Error
'1'
Error - Operation failed
'0'
No Error - Operation successful
Part Number
Manufacture Code
Device Code
Bus Width
HY27(U/S)A081G1M
ADh
79h
x8
HY27(U/S)A161G1M
00ADh
0074h
x16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27US08121B-TPIS | 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48 |
| HY27US08121B-FIB | 64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63 |
| HY27US081G1MSES | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY27US081G1MTCS | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY27US081G1MTPMP | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27UA161G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UA1G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UAXXX | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
| HY27UF081G2A-C | 制造商:SK Hynix Inc 功能描述: |
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