參數(shù)資料
型號: HY27SA081G1M-FPEB
廠商: HYNIX SEMICONDUCTOR INC
元件分類: PROM
英文描述: 128M X 8 FLASH 1.8V PROM, 12000 ns, PBGA63
封裝: 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
文件頁數(shù): 21/45頁
文件大?。?/td> 675K
代理商: HY27SA081G1M-FPEB
Rev 0.3 / May. 2004
29
Preliminary
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Table 11: Operating and AC Measurement Conditions
Note : (1). TBD
Table 12: Capacitance
Note: TA = 25oC, f = 1 MHz. CIN and CI/O are not 100% tested.
Parameter
NAND Flash
Unit
Min
Max
Supply Voltage (VCC)
1.8V devices(1)
1.7
1.95
V
2.6V devices(1)
2.4
2.8
V
3.3V devices
2.7
3.6
V
Ambient Temperature (TA)
Commercial Temp.
0
70
oC
Indurstrial Temp.
-40
85
oC
Load Capacitance (CL) (1 TTL GATE and CL)
1.8V devices(1)
30
pF
2.6V devices(1)
30
pF
3.3V devices
100
pF
Input Pulses Voltages
1.8V devices(1)
0VCC
V
2.6V devices(1)
0VCC
V
3.3V devices
0.4
2.4
V
Input and Output Timing Ref. Voltages
1.8V devices(1)
VCC/2
V
2.6V devices(1)
V
3.3V devices
1.5
V
Input Rise and Fall Times
5
ns
Symbol
Parameter
Test Condition
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0V
10
pF
CI/O
Input/Output Capacitance
VIL = 0V
10
pF
相關(guān)PDF資料
PDF描述
HY27SA081G1M-VPEB 128M X 8 FLASH 1.8V PROM, 12000 ns, PDSO48
HY27UA081G1M-TIB 128M X 8 FLASH 3.3V PROM, 12000 ns, PDSO48
HY27US08121B-TPIS 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48
HY27US08121B-FIB 64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63
HY27US081G1MSES 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27SA161G1M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SA1G1M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SAXXX 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2A 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
HY27SF081G2A-F(P) 制造商:SK Hynix Inc 功能描述: