參數(shù)資料
型號(hào)： HY27SA081G1M-FPEB
廠商： HYNIX SEMICONDUCTOR INC
元件分類： PROM
英文描述： 128M X 8 FLASH 1.8V PROM, 12000 ns, PBGA63
封裝： 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
文件頁(yè)數(shù)： 1/45頁(yè)
文件大?。?/td> 675K
代理商： HY27SA081G1M-FPEB
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 0.3 / May. 2004
1
Preliminary
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Document Title
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Revision History
No.
History
Draft Date
Remark
0.0
1) Initial Draft
Nov. 28. 2003
Preliminary
0.1
1) Add 1.8V Operation Product to Data sheet
Mar. 11. 2004
Preliminary
0.2
1) Change AC Characteristics
- tWP(25ns->40ns), tWC(50ns->60ns),
- tRP(30ns->40ns), tRC(50ns->60ns),
- tREADID(35ns->45ns)
Apr. 29. 2004
Preliminary
0.3
1) Add Errata (3V Product)
2) Add Applicaiton Note
Reset command must be issued when the controller writes data to
another 512Mb.(i.e. When A26 is changed during program.)
3) Modify the description of Device Operations
- /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled
(Enabled) (Page23)
4) Add the description of System Interface Using /CE don’t care (Page40)
May. 14. 2004
Preliminary
tWH
tREH
Specification
15
Relaxed value
20
相關(guān)PDF資料
PDF描述
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