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參數(shù)資料
| 型號： | HY27SA081G1M-FPEB |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 12000 ns, PBGA63 |
| 封裝： | 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 |
| 文件頁數(shù)： | 16/45頁 |
| 文件大?。?/td> | 675K |
| 代理商： | HY27SA081G1M-FPEB |
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Rev 0.3 / May. 2004
23
Preliminary
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Automatic Page 0 Read Description.
At powerup, once the supply voltage has reached the threshold level, VCCth, all digital outputs revert to their reset
state and the internal NAND device functions (reading, writing, erasing) are enabled.
The device then automatically switches to read mode where, as in any read operation, the device is busy for a time
tBLBH1 during the data is transferred to the Page Buffer. Once the data transfer is complete the Ready/Busy signal goes
High. The data can then be read out sequentially on the I/O bus by pulsing the Read Enable, RE, signal. Figures 18
and 19 show the power-up waveforms for devices featuring the Automatic Page 0 Read option.
Sequential Row Read Disabled
If the device is delivered with Sequential row read disabled and Automatic Read Page 0 at Power-up, only the first
page (Page 0) will be automatically read after the power-on sequence. Refer to Figure 18.
Sequential Row Read Enabled
If the device is delivered with the Automatic Page 0 Read option only (Sequential Row Read Enable), the device will
automatically enter Sequential Row Read mode after the power-up sequence, and start reading Page 0, Page 1, etc.,
until the last memory location is reached, each new page being accessed after a time tBLBH1.
The Sequential Row Read operation can be inhibited or interrupted by de-asserting E (set to VIH) or by issuing a com-
mand. Refer to Figure 19.
Note: (1). VCCth is equal to 2.5V for 3V Power Supply devices.
Figure 18. Sequential Row Read Disabled and Automatic Page 0 Read at power-up
Data
N+1
Data
N
Last
Data
N+2
tBLBH1
Busy
Vccth (1)
Vcc
ALE
CLE
I/O
RE
RB
CE
WE
Data Output
from Address N to Last Byte or Word in Page
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27SA081G1M-VPEB | 128M X 8 FLASH 1.8V PROM, 12000 ns, PDSO48 |
| HY27UA081G1M-TIB | 128M X 8 FLASH 3.3V PROM, 12000 ns, PDSO48 |
| HY27US08121B-TPIS | 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48 |
| HY27US08121B-FIB | 64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63 |
| HY27US081G1MSES | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
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