參數(shù)資料
型號： HB52E169E12
廠商： Hitachi,Ltd.
英文描述： 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述： 128 MB的注冊SDRAM的內(nèi)存（128 MB的寄存同步的DRAM內(nèi)存）
文件頁數(shù)： 5/53頁
文件大小： 1737K
代理商： HB52E169E12
HB52E169E12-F
5
19
SDRAM device attributes:
CS latency
SDRAM device attributes:
W latency
SDRAM device attributes
SDRAM device attributes:
General
SDRAM cycle time
(2nd highest CE latency)
(-A6F) 10 ns
(-B6F) Undefined
SDRAM access from Clock
(2nd highest CE latency)
(-A6F) 6 ns
(-B6F) Undefined
SDRAM cycle time
(3rd highest CE latency)
Undefined
SDRAM access from Clock
(3rd highest CE latency)
Undefined
Minimum row precharge time
Row active to row active min
RE to CE delay min
Minimum RE pulse width
Density of each bank on module 0
Address and command signal
input setup time
Address and command signal
input hold time
Data signal input setup time
Data signal input hold time
Superset information
0
0
0
0
0
0
0
1
01
0
20
0
0
0
0
0
0
0
1
01
0
21
22
0
0
0
0
0
0
1
0
0
1
1
1
1
1
0
0
16
0E
Registered
V
CC
±
10%
23
1
0
1
0
0
0
0
0
A0
CL = 2
0
0
0
1
0
1
0
0
0
0
0
0
0
0
0
0
00
60
24
CL = 2
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
00
00
25
26
0
0
0
0
0
0
0
0
00
27
28
29
30
31
32
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
14
14
14
32
20
20
20 ns
20 ns
20 ns
50 ns
128M byte
2 ns*
7
0
33
0
0
0
1
0
0
0
0
10
1 ns*
7
34
35
36 to
61
62
63
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
20
10
00
2 ns*
7
1 ns*
7
Future use
SPD data revision code
Checksum for bytes 0 to 62
(-A6F)
(-B6F)
Manufacturer’s JEDEC ID code 0
Manufacturer’s JEDEC ID code 0
0
0
0
0
0
1
1
1
0
0
0
1
1
1
0
0
12
36
Rev. 1.2A
54
0
0
0
0
1
0
0
1
0
0
0
0
0
1
1
0
0
1
0
0
1
0
34
07
00
52
HITACHI
64
65 to
71
72
Manufacturing location
×
×
×
×
×
×
×
×
××
*
3
(ASCII-
8bit code)
H
B
5
2
73
74
75
76
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
0
0
0
0
1
1
0
0
0
0
1
1
0
0
1
1
1
0
0
0
0
0
1
0
0
1
0
1
0
0
1
0
48
42
35
32
Byte
No.
Function described
Bit
7
Bit
6
Bit
5
Bit
4
Bit
3
Bit
2
Bit
1
Bit
0
Hex value Comments
相關(guān)PDF資料
PDF描述
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
HB52E649E12-A6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12-B6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52E169E1-B6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52E169EN-B6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52E328EM-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
HB52E328EM-B6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
HB52E329EM-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
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