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參數資料
| 型號： | HB52E169E12 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| 中文描述： | 128 MB的注冊SDRAM的內存（128 MB的寄存同步的DRAM內存） |
| 文件頁數： | 20/53頁 |
| 文件大小： | 1737K |
| 代理商： | HB52E169E12 |
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HB52E169E12-F
20
Current state
Read
S
H
L
L
L
RE
×
H
H
H
CE
×
H
H
L
W
×
H
L
H
Address
×
×
×
BA, CA, A10 READ/READ A Continue burst read to CE
Command
DESL
NOP
BST
Operation
Continue burst to end
Continue burst to end
Burst stop to full page
latency and New read
Term burst read/start write
Other bank active
ILLEGAL on same bank*
3
Term burst read and
Precharge
ILLEGAL
ILLEGAL
Continue burst to end and
precharge
Continue burst to end and
precharge
ILLEGAL
L
L
H
L
L
H
L
H
BA, CA, A10 WRIT/WRIT A
BA, RA
ACTV
L
L
H
L
BA, A10
PRE, PALL
L
L
H
L
L
×
L
L
×
H
L
×
×
MODE
×
REF, SELF
MRS
DESL
Read with auto-
precharge
L
H
H
H
×
NOP
L
L
L
L
H
H
H
L
H
L
L
H
L
H
L
H
×
BA, CA, A10 READ/READ A ILLEGAL*
4
BA, CA, A10 WRIT/WRIT A
BA, RA
ACTV
BST
ILLEGAL*
4
Other bank active
ILLEGAL on same bank*
3
ILLEGAL*
4
ILLEGAL
ILLEGAL
Continue burst to end
Continue burst to end
Burst stop on full page
L
L
L
H
L
L
L
L
L
L
L
L
×
H
H
H
H
L
H
L
L
×
H
H
L
L
H
L
H
L
×
H
L
H
L
H
BA, A10
×
MODE
×
×
×
BA, CA, A10 READ/READ A Term burst and New read
BA, CA, A10 WRIT/WRIT A
BA, RA
ACTV
PRE, PALL
REF, SELF
MRS
DESL
NOP
BST
Write
Term burst and New write
Other bank active
ILLEGAL on same bank*
3
Term burst write and
Precharge*
2
ILLEGAL
Continue burst to end and
precharge
Continue burst to end and
precharge
ILLEGAL
L
L
H
L
BA, A10
PRE, PALL
L
H
L
×
L
×
H
×
×
×
REF, SELF
DESL
Write with auto-
precharge
L
H
H
H
×
NOP
L
L
L
L
H
H
H
L
H
L
L
H
L
H
L
H
×
BA, CA, A10 READ/READ A ILLEGAL*
4
BA, CA, A10 WRIT/WRIT A
BA, RA
ACTV
BST
ILLEGAL*
4
Other bank active
ILLEGAL on same bank*
3
ILLEGAL*
4
ILLEGAL
ILLEGAL
L
L
L
L
L
L
H
L
L
L
H
L
BA, A10
×
MODE
PRE, PALL
REF, SELF
MRS
相關PDF資料 |
PDF描述 |
|---|---|
| HB52E648EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649E12 | THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| HB52E649E12-A6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HB52E169E1-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52E169EN-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52E328EM-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM |
| HB52E328EM-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM |
| HB52E329EM-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM |
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