參數(shù)資料
型號(hào)： HB52E169E12
廠商： Hitachi,Ltd.
英文描述： 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述： 128 MB的注冊(cè)SDRAM的內(nèi)存（128 MB的寄存同步的DRAM內(nèi)存）
文件頁數(shù)： 13/53頁
文件大?。?/td> 1737K
代理商： HB52E169E12
HB52E169E12-F
13
AC Characteristics (Ta = 0 to 55
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
AC Characteristics (Ta = 0 to 55
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V) (cont)
Notes: 1. AC measurement assumes t
T
= 1 ns. Reference level for timing of input signals is 1.5 V.
2. Access time is measured at 1.5 V. Load condition is C
L
= 50 pF.
3. t
LZ
(max) defines the time at which the outputs achieves the low impedance state.
4. t
HZ
(max) defines the time at which the outputs achieves the high impedance state.
Parameter
System clock cycle time
(CE latency = 3)
(CE latency = 4)
CK high pulse width
CK low pulse width
Access time from CK
(CE latency = 3)
(CE latency = 4)
Data-out hold time
CK to Data-out low impedance
CK to Data-out high impedance
Data-in setup time
Data in hold time
Address setup time
Address hold time
CKE setup time
CKE setup time for power down exit
CKE hold time
HITACHI
Symbol
PC100
Symbol
HB52E169E12
-A6F/B6F
Min
Unit
Notes
1
Max
t
CK
t
CK
t
CKH
t
CKL
Tclk
Tclk
Tch
Tcl
10
10
4
4
—
—
—
—
ns
ns
ns
ns
1
1
1, 2
t
AC
t
AC
t
OH
t
LZ
t
HZ
t
DS
t
DH
t
AS
t
AH
t
CES
t
CESP
t
CEH
Tac
Tac
Toh
—
—
2.1
1.1
—
2.9
1.9
2.6
1.6
2.6
2.6
1.6
6.9
6.9
—
—
6.9
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1, 2
1, 2, 3
1, 4
1
1
1
1
1, 5
1
1
Tsi
Thi
Tsi
Thi
Tsi
Tpde
Thi
Parameter
Command setup time
Command hold time
Ref/Active to Ref/Active command period t
RC
Active to precharge command period
Active command to column command
(same bank)
Precharge to active command period
Write recovery or data-in to precharge
lead time
Active (a) to Active (b) command period t
RRD
Transition time (rise to fall)
Refresh period
HITACHI
Symbol
t
CS
t
CH
PC100
Symbol
Tsi
Thi
Trc
Tras
Trcd
HB52E169E12
-A6F/B6F
Min
2.6
1.6
70
50
20
Unit
ns
ns
ns
ns
ns
Notes
1
1
1
1
1
Max
—
—
—
120000
—
t
RAS
t
RCD
t
RP
t
DPL
Trp
Tdpl
20
15
—
—
ns
ns
1
1
Trrd
20
1
—
—
5
64
ns
ns
ms
1
t
T
t
REF
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