型號(hào) 廠商 描述
hn29w6411att-50
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
EEPROM|AND FLASH|8448KX8|CMOS|TSOP|48PIN|PLASTIC
hn29w6411tt-50
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
AND Flash EEPROM
hn29w6484ah03te-1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
MEMORY CONTROLLER
hn29w64ah05te-1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
MEMORY CONTROLLER
hn29w8411series
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
AND Flash EEPROM
hn29wb800fp-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wb800fp-12
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wb800fp-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Bottom entry type connector, Two-piece connector; HRS No: 547-0114-4 00; No. of Positions: 20; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm
hn29wb800r-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wb800r-12
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wb800r-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wb800series
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wb800t-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wb800t-12
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wb800t-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wt800fp-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wt800fp-12
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wt800fp-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wt800r-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wt800r-12
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wt800r-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wt800series
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Bottom entry type connector, Two-piece connector; HRS No: 547-0093-6 00; No. of Positions: 22; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm
hn29wt800t-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wt800t-12
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn29wt800t-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
x8/x16 Flash EEPROM
hn2a01fugr
2 3
TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
hn2a01fuy
2 3
TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
hn2a01fu
2
Toshiba Corporation PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
hn2a26fs
2 3
Toshiba Corporation Frequency General-Purpose Amplifier Applications
hn2c01fugr
2 3
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
hn2c01fuy
2 3
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
hn2c01fu
2
Toshiba Corporation NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
hn2c10ft
2
Toshiba Corporation VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
hn2c10fu
2
Toshiba Corporation NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
hn2c11fu
Toshiba Corporation NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
hn2c12ft
2 3
TRANSISTOR | BJT | PAIR | NPN | 8V V(BR)CEO | 15MA I(C) | TSOP
hn2c13ft
2 3
TRANSISTOR | BJT | PAIR | NPN | 5V V(BR)CEO | 15MA I(C) | TSOP
hn2c12fu
Toshiba Corporation NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
hn2d01fu
2
ARRAY OF INDEPENDENT DIODES|TSOP
hn2d01fu
2
Toshiba Corporation Ultra High Speed Switching Diode(超高速開關(guān)二極管)
hn2d01f
2
Toshiba Corporation DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
hn2d01je
2 3 4
Toshiba Corporation Silicon Epitaxial Planar Type Ultra High Speed Switching Application
hn2d02fu
2
Toshiba Corporation Ultra High Speed Switching Diode(超高速開關(guān)二極管)
hn2d03f
2 3 4
Toshiba Corporation High Speed Switching Application
hn2e01f
2 3 4 5 6 7
Toshiba Corporation MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
hn2e01f_07
2 3 4 5 6 7
Toshiba Corporation MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
hn2e02f
2 3 4 5 6
Toshiba Corporation Super High Speed Switching Application
hn2e04f
2 3 4 5 6 7 8
Toshiba Corporation MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
hn2e05j
2 3 4 5 6
Toshiba Corporation MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
hn2s01fu
2
Toshiba Corporation DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)