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參數(shù)資料
| 型號(hào)： | HN29WB800FP-8 |
| 英文描述： | Bottom entry type connector, Two-piece connector; HRS No: 547-0114-4 00; No. of Positions: 20; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁(yè)數(shù)： | 18/43頁(yè) |
| 文件大小： | 321K |
| 代理商： | HN29WB800FP-8 |
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HN29W12811BP Series
18
DC Characteristics
(V
CC
= 3.3 V
±
0.3 V, Ta = 0 to +70C)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input leakage current
I
LI
I
LO
I
SB1
I
SB2
—
—
2
μ
A
μ
A
Vin = V
SS
to V
CC
Vout = V
SS
to V
CC
CE
= V
IH
CE
= V
CC
±
0.2 V,
RES
= V
CC
±
0.2 V
RES
= V
SS
±
0.2 V
Iout = 0 mA, f = 0.2 MHz
Output leakage current
—
—
2
Standby V
CC
current
—
0.3
1
mA
—
30
50
μ
A
Deep standby V
CC
current
Operating V
CC
current
I
SB3
I
CC1
I
CC2
—
1
5
μ
A
—
5
20
mA
—
20
40
mA
Iout = 0 mA, f = 20 MHz
Operating V
CC
current (Program) I
CC3
Operating V
CC
current (Erase)
Input voltage
—
20
40
mA
In programming
I
CC4
V
IL
V
IH
V
ILR
V
IHR
V
OL
V
OH
—
20
40
mA
In erase
–0.3*
1, 2
—
0.8
V
2.0
—
V
CC
+ 0.3*
3
0.2
V
Input voltage (
RES
pin)
–0.2
—
V
V
CC
– 0.2 —
—
V
CC
+ 0.2
0.4
V
Output voltage
—
V
I
OL
= 2 mA
I
OH
= –2 mA
2.4
—
—
V
Notes: 1. V
min = –1.0 V for pulse width
≤
50 ns in the read operation. V
IL
min = –2.0 V for pulse width
≤
20
ns in the read operation.
2. V
IL
min = –0.6 V for pulse width
≤
20 ns in the erase/data programming operation.
3. V
max = V
+ 1.5 V for pulse width
≤
20 ns. If V
IH
is over the specified maximum value, the
operations are not guaranteed.
AC Characteristics
(V
CC
= 3.3 V
±
0.3 V, Ta = 0 to +70C)
Test Conditions
Input pulse levels: 0.4 V/2.4 V
Input pulse levels for
RES
: 0.2 V/V
CC
– 0.2 V
Input rise and fall time:
≤
5 ns
Output load: 1 TTL gate + 100 pF (Including scope and jig.)
Reference levels for measuring timing: 0.8 V, 1.8 V
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PDF描述 |
|---|---|
| HN29WB800R-10 | x8/x16 Flash EEPROM |
| HN29WB800R-12 | x8/x16 Flash EEPROM |
| HN29WB800R-8 | x8/x16 Flash EEPROM |
| HN29WB800SERIES | x8/x16 Flash EEPROM |
| HN29WB800T-10 | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29WB800R-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WB800R-12 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WB800R-8 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WB800SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WB800T-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
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