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參數(shù)資料
| 型號(hào)： | HN29WB800FP-8 |
| 英文描述： | Bottom entry type connector, Two-piece connector; HRS No: 547-0114-4 00; No. of Positions: 20; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 21/43頁 |
| 文件大?。?/td> | 321K |
| 代理商： | HN29WB800FP-8 |
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HN29W12811BP Series
21
Program, Erase and Erase Verify
HN29W12811
-60
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Note
Write cycle time
t
CWC
t
SCC
t
CES
t
CEH
t
WP
t
WPH
t
AS
t
AH
t
DS
t
DH
t
OEWS
120
—
—
ns
Serial clock cycle time
CE
setup time
CE
hold time
60
—
—
ns
0
—
—
ns
0
—
—
ns
Write pulse time
60
—
—
ns
Write pulse high time
40
—
—
ns
Address setup time
50
—
—
ns
Address hold time
10
—
—
ns
Data setup time
50
—
—
ns
Data hold time
OE
setup time before command
write
OE
setup time before status polling t
OEPS
OE
setup time before read
10
—
—
ns
0
—
—
ns
40
—
—
ns
t
OER
t
DB
250
—
—
ns
Time to device busy
—
—
150
ns
Time to device busy on read mode t
DBR
Auto erase time
—
—
1
μ
s
t
ASE
t
ASP
—
1.0
14.0
ms
Auto program time
Program(1), (3)
—
2.5
22.0
ms
Program(2)
t
ASP
t
ASP
—
2.0
22.0
ms
Program(4),
Data recovery write
WE
to SC delay time
WE
to SC delay time on recovery
read mode
CE
pulse high time
—
2.5
30.0
ms
t
WSD
t
WSDR
50
—
—
μ
s
μ
s
2
—
—
t
CPH
t
SP
t
SPL
t
SDS
t
SDH
t
SW
200
—
—
ns
SC pulse width
25
—
—
ns
SC pulse low time
25
—
—
ns
Data setup time for SC
0
—
—
ns
Data hold time for SC
SC setup for
WE
35
—
—
ns
CDE
= V
IL
50
—
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN29WB800R-10 | x8/x16 Flash EEPROM |
| HN29WB800R-12 | x8/x16 Flash EEPROM |
| HN29WB800R-8 | x8/x16 Flash EEPROM |
| HN29WB800SERIES | x8/x16 Flash EEPROM |
| HN29WB800T-10 | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29WB800R-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WB800R-12 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WB800R-8 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WB800SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WB800T-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
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