參數(shù)資料
型號(hào)： HN29WB800FP-8
英文描述： Bottom entry type connector, Two-piece connector; HRS No: 547-0114-4 00; No. of Positions: 20; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm
中文描述： x8/x16閃存EEPROM
文件頁數(shù)： 10/43頁
文件大?。?/td> 321K
代理商： HN29WB800FP-8
HN29W12811BP Series
10
Mode Description
Read
Serial Read (1):
Memory data D0 to D2111 in the sector of address SA is sequentially read.
Output data is
not valid after the number of the SC pulse exceeds 2112. When CA is input, memory data D (m) to D (m + j)
in the sector of address SA is sequentially read. Then output data is not valid after the number of the SC pulse
exceeds (2112 to m). The mode turns back to the standby mode at any time when
CE
is V
IH
.
Serial Read (2):
Memory data D2048 to D2111 in the sector of address SA is sequentially read. Output data
is not valid after the number of the SC pulse exceeds 64. The mode turns back to the standby mode at any
time when
CE
is V
IH
.
Automatic Erase
Single Sector Erase:
Memory data D0 to D2111 in the sector of address SA is erased automatically by
internal control circuits. After the sector erase starts, the erasure completion can be checked through the
RDY/
Busy
signal and status data polling. All the bits in the sector are "1" after the erase. The sector valid
data stored in a part of memory data D2048 to D2111 must be read and kept outside of the sector before the
sector erase.
Automatic Program
Program (1):
Program data PD0 to PD2111 is programmed into the sector of address SA automatically by
internal control circuits. When CA is input, program data PD (m) to PD (m + j) is programmed from CA into
the sector of address SA automatically by internal control circuits. By using program (1), data can
additionally be programed for each sector before the following erase. When the column is programmed, the
data of the column must be [FF]. After the programming starts, the program completion can be checked
through the RDY/
Busy
signal and status data polling. Programmed bits in the sector turn from "1" to "0"
when they are programmed. The sector valid data should be included in the program data PD2048 to PD2111.
Program (2):
Program data PD0 to PD2111 is programmed into the sector of address SA automatically by
internal control circuits. After the programming starts, the program completion can be checked through the
RDY/
Busy
signal and status data polling. Programmed bits in the sector turn from "1" to "0" when they are
programmed. The sector must be erased before programming. The sector valid data should be included in the
program data PD2048 to PD2111.
Program (3):
Program data PD2048 to PD2111 is programmed into the sector of address SA automatically
by internal control circuits. By using program (3), data can additionally be programed for each sector befor
the following erase. When the column is programmed, the data of the column must be [FF]. After the
programming starts, the program completion can be checked through the RDY/
Busy
signal and status data
polling. Programmed bits in the sector turn from "1" to "0" when they are programmed.
相關(guān)PDF資料
PDF描述
HN29WB800R-10 x8/x16 Flash EEPROM
HN29WB800R-12 x8/x16 Flash EEPROM
HN29WB800R-8 x8/x16 Flash EEPROM
HN29WB800SERIES x8/x16 Flash EEPROM
HN29WB800T-10 x8/x16 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN29WB800R-10 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN29WB800R-12 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN29WB800R-8 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN29WB800SERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WB800T-10 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
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