型號(hào): | HN2E02F |
廠商: | Toshiba Corporation |
英文描述: | Super High Speed Switching Application |
中文描述: | 超高速開關(guān)應(yīng)用 |
文件頁數(shù): | 5/6頁 |
文件大?。?/td> | 286K |
代理商: | HN2E02F |
相關(guān)PDF資料 |
PDF描述 |
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HN2E04F | MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
HN2E05J | MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
HN2S01FU | DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS) |
HN2S01F | DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS) |
HN2S02FU | High Speed Switching Application |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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HN2E04F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
HN2E05J | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
HN2E07JE(TE85L,F) | 功能描述:兩極晶體管 - BJT Small Signal SBD + PNP (BRT) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
HN2S01F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS) |
HN2S01F_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Low Voltage High Speed Switching Application |