參數(shù)資料
型號(hào): HN2E02F
廠商: Toshiba Corporation
英文描述: Super High Speed Switching Application
中文描述: 超高速開關(guān)應(yīng)用
文件頁數(shù): 5/6頁
文件大?。?/td> 286K
代理商: HN2E02F
HN2E02F
2007-11-22
5
Q1, Q2 Common
AMBIENT TEMPERATURE Ta (
°
C)
P
C
*
– Ta
C
C
400
0
175
125
100
50
150
75
25
300
0
100
200
*:Total Rating
相關(guān)PDF資料
PDF描述
HN2E04F MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
HN2E05J MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
HN2S01FU DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
HN2S01F DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
HN2S02FU High Speed Switching Application
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN2E04F 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
HN2E05J 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
HN2E07JE(TE85L,F) 功能描述:兩極晶體管 - BJT Small Signal SBD + PNP (BRT) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN2S01F 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
HN2S01F_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Low Voltage High Speed Switching Application