參數(shù)資料
型號： HN29WT800R-10
英文描述： x8/x16 Flash EEPROM
中文描述： x8/x16閃存EEPROM
文件頁數(shù)： 2/43頁
文件大小： 321K
代理商： HN29WT800R-10
HN29W12811BP Series
2
Erase mode
Single sector erase ((2048 + 64) byte unit)
Fast serial read access time:
First access time: 50
μ
s (max)
Serial access time: 60 ns (max)
Low power dissipation:
I
CC2
= 40 mA (max) (Read)
I
SB2
= 50
μ
A (max) (Standby)
I
CC3
/I
CC4
= 40 mA (max) (Erase/Program)
I
SB3
= 5
μ
A (max) (Deep standby)
The following architecture is required for data reliability.
Error correction: more than 1-bit error correction per each sector read
Spare sectors: 1.8% (145 sectors) within usable sectors
Ordering Information
Type No.
Available sector
Package
HN29W12811BP-60
More than 8,029 sectors
72-bump 0.8 mm ball pitch CSP (TBP-72A)
相關(guān)PDF資料
PDF描述
HN29WT800R-12 x8/x16 Flash EEPROM
HN29WT800R-8 x8/x16 Flash EEPROM
HN29WT800SERIES Bottom entry type connector, Two-piece connector; HRS No: 547-0093-6 00; No. of Positions: 22; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm
HN29WT800T-10 x8/x16 Flash EEPROM
HN29WT800T-12 x8/x16 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN29WT800R-12 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN29WT800R-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WT800SERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WT800T-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WT800T-12 制造商:Renesas Electronics Corporation 功能描述:8MB CMOS FLASH DINOR 1M*8 3.3V
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