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參數(shù)資料
| 型號： | HN29WT800T-8 |
| 英文描述： | x8/x16 Flash EEPROM |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 5/43頁 |
| 文件大?。?/td> | 321K |
| 代理商： | HN29WT800T-8 |
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HN29W12811BP Series
5
Memory Map and Address
1FFFH
1FFEH
1FFDH
0002H
0001H
0000H
000H
2048 bytes
2048 bytes
2048 bytes
2048 bytes
2048 bytes
2048 bytes
64 bytes
64 bytes
64 bytes
64 bytes
64 bytes
64 bytes
8
1
800H
83FH
Control bytes
2048 + 64 bytes
Column address
Sector address
Address
Sector address
Column address
Cycles
SA (1): First cycle
SA (2): Second cycle
CA (1): First cycle
CA (2): Second cycle
I/O0
A0
A8
A0
A8
I/O1
A1
A9
A1
A9
I/O2
A2
A10
A2
A10
I/O3
A3
A11
A3
A11
I/O4
A4
A12
A4
×
I/O5
A5
×
*
2
A5
×
I/O6
A6
×
A6
×
I/O7
A7
×
A7
×
Notes: 1. Some failed sectors may exist in the device. The failed sectors can be recognized
by reading the sector valid data written in a part of the column address 800 to 83F
(The specific address is TBD.). The sector valid data must be read and kept outside
of the sector before the sector erase. When the sector is programmed, the sector
valid data should be written back to the sector.
2. An
×
means "Don't care". The pin level can be set to either V
IL
or V
IH
, referred
to DC characteristics.
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| HN2A01FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN2A01FU_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications |
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