參數(shù)資料
型號(hào): HN29WT800T-8
英文描述: x8/x16 Flash EEPROM
中文描述: x8/x16閃存EEPROM
文件頁數(shù): 40/43頁
文件大小: 321K
代理商: HN29WT800T-8
HN29W12811BP Series
40
Memory Structure
8
sector
2,112 bytes (16,896 bits)
byte (8 bits)
bit
Bit: Minimum unit of data.
Byte: Input/output data unit in programming and reading. (1 byte = 8 bits)
Sector: Page unit in erase, programming and reading. (1 sector = 2,112 bytes = 16,896 bits)
Device: 1 device = 8,192 sectors.
相關(guān)PDF資料
PDF描述
HN2A01FUGR TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
HN2A01FUY TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
HN2A01FU PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
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HN2C01FUGR TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
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