- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371869 > HN29WT800T-8 x8/x16 Flash EEPROM PDF資料下載
參數(shù)資料
| 型號(hào)： | HN29WT800T-8 |
| 英文描述： | x8/x16 Flash EEPROM |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁(yè)數(shù)： | 38/43頁(yè) |
| 文件大?。?/td> | 321K |
| 代理商： | HN29WT800T-8 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)當(dāng)前第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)
HN29W12811BP Series
38
Requirements for High System Reliability
The device may fail during a program, erase or read operation due to write or erase cycles. The following
architecture will enable high system reliability if a failure occurs.
1. For an error in read operation: An error correction more than 1-bit error correction per each sector read is
required for data reliability. Contact Hitachi’s sales office for data storage during long time under high
temperature.
2. For errors in program or erase operations: The device may fail during a program or erase operation due to
write or erase cycles. The status register indicates if the erase and program operation complete in a finite
time. When an error occurred in the sector, try to reprogram the data into another sector. Avoid further
system access to the sector that error happens. Typically, recommended number of a spare sectors are
1.8% of initial usable 8,029 sectors by each device. The recommended number of the spare sectors are
confirmed from 4-level data pattern(39H
/39H) program. For the reprogramming, do not use the data
from the failed sectors, because the data from the failed sectors are not fixed. So the reprogram data must
be the data reloaded from external buffer, or use the Data recovery read mode or the Data recovery write
mode (see the “Mode Description” and under figure “Spare Sector Replacement Flow after Program
Error”). To avoid consecutive sector failures, choose addresses of spare sectors as far as possible from the
failed sectors.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN2A01FUGR | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN2A01FUY | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN2A01FU | PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN2A26FS | Frequency General-Purpose Amplifier Applications |
| HN2C01FUGR | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN2A01FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications |
| HN2A01FE-GR(TE85LF | 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL PNP -50V -0.15A ES6 |
| HN2A01FE-Y(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL PNP -50V -0.15A ES6 |
| HN2A01FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN2A01FU_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。