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參數(shù)資料
| 型號： | HN2D01JE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| 中文描述： | 硅外延平面型超高速開關應用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 209K |
| 代理商： | HN2D01JE |
HN2D01JE
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D01JE
Ultra High Speed Switching Application
z
The HN2D01JE is composed of 2 independent diodes.
z
Low forward voltage
z
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
z
Small total capacitance
Absolute Maximum Ratings
(Ta = 25°C)
: V
F (3)
= 0.98V (typ.)
: C
T
= 0.5pF (typ.)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V
RM
85
V
Reverse voltage
V
R
80
V
Maximum (peak) forward current
I
FM
200 *
mA
Average forward current
I
O
100 *
mA
Surge current (10ms)
I
FSM
1 *
A
Power dissipation
P
100 **
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
55
～
150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating; total rating = unit rating × 1.5.
**: Total rating.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
V
F
(1)
―
I
F
= 1mA
―
0.62
―
V
F
(2)
―
I
F
= 10mA
―
0.75
―
Forward voltage
V
F
(3)
―
I
F
= 100mA
―
0.98
1.20
V
I
R
(1)
―
V
R
= 30V
―
―
0.1
Reverse current
I
R
(2)
―
V
R
= 80V
―
―
0.5
μ
A
Total capacitance
C
T
―
V
R
= 0, f = 1MH
z
―
0.5
―
pF
Reverse recovery time
t
rr
―
I
F
= 10mA, Fig.1
―
1.6
―
ns
1.ANODE1
2.NC
3.ANODE2
4.CATHODE2
5.CATHODE1
JEDEC
JEITA
TOSHIBA
Weight: 0.003 mg (typ.)
―
―
1-2W1B
Unit: mm
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HN2D01JE(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:DIODE SW 80V 100MA ESV 制造商:Toshiba America Electronic Components 功能描述:S/W Diode,Vr=80V,Io=0.1A,ESV |
| HN2D02FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| HN2D02FU(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:DIODE SW 80V 80MA US6 制造商:Toshiba America Electronic Components 功能描述:Diodes - General Purpose, Power, Switching Switching Diode 3 Circuit 0.08A 80V 制造商:Toshiba America Electronic Components 功能描述:S/W Diode,Vr=80V,Io=0.1A,CC,US6 |
| HN2D02FUTW1T1 | 功能描述:整流器 85V 100mA RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| HN2D02FUTW1T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Ultra High Speed Switching Diodes |
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