參數(shù)資料
型號(hào)： HN29WT800R-12
英文描述： x8/x16 Flash EEPROM
中文描述： x8/x16閃存EEPROM
文件頁(yè)數(shù)： 6/43頁(yè)
文件大?。?/td> 321K
代理商： HN29WT800R-12
HN29W12811BP Series
6
Pin Function
CE
:
CE
is used to select the device. The status returns to the standby at the rising edge of
CE
in the reading
operation. However, the status does not return to the standby at the rising edge of
CE
in the busy state in
programming and erase operation.
OE
:
Memory data and status register data can be read, when
OE
is V
IL
.
WE
:
Commands and address are latched at the rising edge of
WE
.
SC:
Programming and reading data is latched at the rising edge of SC.
RES
:
RES
pin must be kept at the V
ILR
(V
SS
±
0.2 V) level when V
CC
is turned on and off. In this way, data
in the memory is protected against unintentional erase and programming.
RES
must be kept at the V
IHR
(V
CC
±
0.2 V) level during any operations such as programming, erase and read.
CDE
:
Commands and data are latched when
CDE
is V
IL
and address is latched when
CDE
is V
IH
.
RDY/
Busy
:
The RDY/
Busy
indicates the program/erase status of the flash memory. The RDY/
Busy
signal
is initially at a high impedance state. It turns to a V
OL
level after the (40H) command in programming
operation or the (B0H) command in erase operation. After the erase or programming operation finishes, the
RDY/
Busy
signal turns back to the high impedance state.
I/O0 to I/O7:
The I/O pins are used to input data, address and command, and are used to output memory data
and status register data.
Mode Selection
Mode
CE
OE
WE
SC
RES
CDE
RDY/
Busy
*
3
I/O0 to I/O7
Deep standby
×
*
4
×
×
×
×
×
×
×
×
V
ILR
V
IHR
V
IHR
V
IHR
V
IHR
×
×
×
×
V
OH
V
OH
V
OH
V
OH
V
OH
High-Z
Standby
V
IH
V
IL
V
IL
V
IL
High-Z
Output disable
V
IH
V
IL
V
IH
V
IH
V
IH
V
IL
High-Z
Status register read*
1
Status register outputs
Command write*
2
Notes: 1. Default mode after the power on is the status register read mode (refer to status transition). From
I/O0 to I/O7 pins output the status, when
CE
= V
IL
and
OE
= V
IL
(conventional read operation
condition).
2. Refer to the command definition. Data can be read, programmed and erased after commands are
written in this mode.
3. The RDY/
Busy
bus should be pulled up to V
CC
to maintain the V
OH
level while the RDY/
Busy
pin
outputs a high impedance.
4. An
×
means “Don’t care”. The pin level can be set to either V
IL
or V
IH
referred to DC characteristics.
V
IL
V
IL
Din
相關(guān)PDF資料
PDF描述
HN29WT800R-8 x8/x16 Flash EEPROM
HN29WT800SERIES Bottom entry type connector, Two-piece connector; HRS No: 547-0093-6 00; No. of Positions: 22; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm
HN29WT800T-10 x8/x16 Flash EEPROM
HN29WT800T-12 x8/x16 Flash EEPROM
HN29WT800T-8 x8/x16 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN29WT800R-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WT800SERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WT800T-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WT800T-12 制造商:Renesas Electronics Corporation 功能描述:8MB CMOS FLASH DINOR 1M*8 3.3V
HN29WT800T-8 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
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