參數(shù)資料
型號： S29GL128P11FAIR10
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, FBGA-64
文件頁數(shù)： 73/77頁
文件大小： 2121K
代理商： S29GL128P11FAIR10
November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
Flash Family
73
D a t a
S h e e t
( P r e l i m i n a r y )
Table 12.6
System Interface String
Addresses (x16)
Addresses (x8)
Data
Description
1Bh
36h
0027h
V
CC
Min. (write/erase) D7–D4: volt, D3–D0: 100 mV
V
CC
Max. (write/erase) D7–D4: volt, D3–D0: 100 mV
V
PP
Min. voltage (00h = no V
PP
pin present)
V
PP
Max. voltage (00h = no V
PP
pin present)
Typical timeout per single byte/word write 2
N
μs
Typical timeout for Min. size buffer write 2
N
μs (00h = not supported)
Typical timeout per individual block erase 2
N
ms
Typical timeout for full chip erase 2
N
ms (00h = not supported)
Max. timeout for byte/word write 2
N
times typical
Max. timeout for buffer write 2
N
times typical
Max. timeout per individual block erase 2
N
times typical
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
1Ch
38h
0036h
1Dh
3Ah
0000h
1Eh
3Ch
0000h
1Fh
3Eh
0006h
20h
40h
0006h
21h
42h
0009h
22h
44h
0013h
23h
46h
0003h
24h
48h
0005h
25h
4Ah
0003h
26h
4Ch
0002h
Table 12.7
Device Geometry Definition
Addresses (x16)
Addresses (x8)
Data
Description
27h
4Eh
001Bh
001Ah
0019h
0018h
Device Size = 2
N
byte
1B = 1 Gb, 1A= 512 Mb, 19 = 256 Mb, 18 = 128 Mb
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0006h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0001h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
00xxh
000xh
0000h
000xh
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
00FFh, 0003h, 0000h, 0002h =1 Gb
00FFh, 0001h, 0000h, 0002h = 512 Mb
00FFh, 0000h, 0000h, 0002h = 256 Mb
007Fh, 0000h, 0000h, 0002h = 128 Mb
31h
32h
33h
34h
60h
64h
66h
68h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
相關(guān)PDF資料
PDF描述
S29GL128P11FAIR12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFI010 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFI012 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFIR10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFIR12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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