參數(shù)資料
型號(hào)： S29GL128P11FAIR10
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, FBGA-64
文件頁數(shù)： 34/77頁
文件大?。?/td> 2121K
代理商： S29GL128P11FAIR10
34
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
7.7.6
Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming operation or a
“Write to Buffer” programming operation so that data can read from any non-suspended sector. When the
Program Suspend command is written during a programming process, the device halts the programming
operation within 15
μs maximum (5
μs typical) and updates the status bits. Addresses are “don't-cares” when
writing the Program Suspend command.
After the programming operation has been suspended, the system can read array data from any non-
suspended sector. The Program Suspend command may also be issued during a programming operation
while an erase is suspended. In this case, data may be read from any addresses not within a sector in Erase
Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector area, then user must use
the proper command sequences to enter and exit this region.
The system may also write the Autoselect Command Sequence when the device is in Program Suspend
mode. The device allows reading Autoselect codes in the suspended sectors, since the codes are not stored
in the memory array. When the device exits the Autoselect mode, the device reverts to Program Suspend
mode, and is ready for another valid operation. See
Autoselect
on page 21
for more information.
After the Program Resume command is written, the device reverts to programming. The system can
determine the status of the program operation using the write operation status bits, just as in the standard
program operation. See
Write Operation Status
on page 36
for more information.
The system must write the Program Resume command (address bits are “don't care”) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Program Resume command
are ignored. Another Program Suspend command can be written after the device has resumed programming.
Software Functions and Sample Code
The following is a C source code example of using the program suspend function. Refer to the
Spansion Low
Level Driver User’s Guide
(available on
www.spansion.com
) for general information on Spansion Flash
memory software development guidelines.
/* Example: Program suspend command */
*( (UINT16 *)base_addr ) = 0x00B0; /* write suspend command */
The following is a C source code example of using the program resume function. Refer to the
Spansion Low
Level Driver User’s Guide
(available on
www.spansion.com
) for general information on Spansion Flash
memory software development guidelines.
/* Example: Program resume command */
*( (UINT16 *)base_addr ) = 0x0030; /* write resume command */
Table 7.12
Program Suspend
(LLD Function = lld_ProgramSuspendCmd)
Cycle
Operation
Word Address
Data
1
Write
Base + XXXh
00B0h
Table 7.13
Program Resume
(LLD Function = lld_ProgramResumeCmd)
Cycle
Operation
Word Address
Data
1
Write
Base + XXXh
0030h
相關(guān)PDF資料
PDF描述
S29GL128P11FAIR12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFI010 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFI012 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFIR10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFIR12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128P11FAIV10 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 64BGA - Trays
S29GL128P11FAIV20 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 64BGA - Trays
S29GL128P11FF.IS4 制造商:Spansion 功能描述:
S29GL128P11FFI010 功能描述:閃存 128Mb 3V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL128P11FFI013 制造商:Spansion 功能描述:FLASH MEMORY - Tape and Reel
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