參數(shù)資料
型號： S29GL128P11FAIR10
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, FBGA-64
文件頁數(shù)： 52/77頁
文件大小： 2121K
代理商： S29GL128P11FAIR10
52
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
Note
Base = Base Address.
/* Example: SecSi Sector Exit Command */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)base_addr + 0x555 ) = 0x0090; /* write SecSi Sector Exit cycle 3 */
*( (UINT16 *)base_addr + 0x000 ) = 0x0000; /* write SecSi Sector Exit cycle 4 */
11. Electrical Specifications
11.1
Absolute Maximum Ratings
Notes
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may undershoot V
SS
to –2.0 V for periods of up
to 20 ns. See
Figure 11.1
. Maximum DC voltage on input or I/Os is V
CC
+ 0.5 V. During voltage transitions inputs or I/Os may overshoot to
V
CC
+ 2.0 V for periods up to 20 ns. See
Figure 11.2
.
2. Minimum DC input voltage on pins A9 and ACC is -0.5V. During voltage transitions, A9 and ACC may overshoot V
SS
to –2.0 V for periods
of up to 20 ns. See
Figure 11.1
. Maximum DC voltage on pins A9 and ACC is +12.5 V, which may overshoot to 14.0 V for periods up to 20
ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not
implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
Figure 11.1
Maximum Negative Overshoot Waveform
Table 10.4
Secured Silicon Sector Exit
(LLD Function = lld_SecSiSectorExitCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Base + AAAh
Base + 555h
00AAh
Unlock Cycle 2
Write
Base + 555h
Base + 2AAh
0055h
Exit Cycle 3
Write
Base + AAAh
Base + 555h
0090h
Exit Cycle 4
Write
Base + AAAh
Base + 000h
0000h
Description
Rating
Storage Temperature, Plastic Packages
–65°C to +150°C
Ambient Temperature with Power Applied
–65°C to +125°C
Voltage with Respect to Ground
All Inputs and I/Os except as noted below
(Note 1)
–0.5 V to V
CC
+ 0.5 V
V
CC
(Note 1)
V
IO
A9 and ACC (Note 2)
–0.5 V to +4.0 V
–0.5V to +4.0V
–0.5 V to +12.5 V
Output Short Circuit Current (Note 3)
200 mA
20 n
s
20 n
s
+0 .
8
V
–0.5 V
20 n
s
–2.0 V
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