參數(shù)資料
型號： S29GL128P11FAIR10
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, FBGA-64
文件頁數(shù)： 72/77頁
文件大?。?/td> 2121K
代理商： S29GL128P11FAIR10
72
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
12.2
Common Flash Memory Interface
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and back-
ward-compatible for the specified flash device families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h any time the device is ready to read array data. The system can read CFI information at the addresses
given in Tables
12.6–12.8
). All reads outside of the CFI address range, returns non-valid data. Reads from
other sectors are allowed, writes are not. To terminate reading CFI data, the system must write the reset
command.
The system can also write the CFI query command when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read CFI data at the addresses given in Tables
12.6–12.8
.
The system must write the reset command to return the device to reading array data.
The following is a C source code example of using the CFI Entry and Exit functions. Refer to the
Spansion
Low Level Driver User’s Guide
(available on
www.spansion.com
) for general information on Spansion Flash
memory software development guidelines.
/* Example: CFI Entry command */
*( (UINT16 *)base_addr + 0x55 ) = 0x0098; /* write CFI entry command */
/* Example: CFI Exit command */
*( (UINT16 *)base_addr + 0x000 ) = 0x00F0; /* write cfi exit command */
For further information, please refer to the CFI Specification (see JEDEC publications JEP137-A and
JESD68.01and CFI Publication 100). Please contact your sales office for copies of these documents.
Table 12.5
CFI Query Identification String
Addresses
(x16)
Addresses
(x8)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
相關(guān)PDF資料
PDF描述
S29GL128P11FAIR12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFI010 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFI012 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFIR10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFIR12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128P11FAIV10 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 64BGA - Trays
S29GL128P11FAIV20 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 64BGA - Trays
S29GL128P11FF.IS4 制造商:Spansion 功能描述:
S29GL128P11FFI010 功能描述:閃存 128Mb 3V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL128P11FFI013 制造商:Spansion 功能描述:FLASH MEMORY - Tape and Reel
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