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參數(shù)資料
| 型號(hào)： | S29GL128P11FAIR10 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FBGA-64 |
| 文件頁(yè)數(shù)： | 62/77頁(yè) |
| 文件大小： | 2121K |
| 代理商： | S29GL128P11FAIR10 |
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62
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
Figure 11.11
Chip/Sector Erase Operation Timings
Notes
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see
Write Operation Status on page 36
.)
2. These waveforms are for the word mode
Figure 11.12
Data# Polling Timings (During Embedded Algorithms)
Notes
1. VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
2. t
OE
for data polling is 45 ns when V
IO
= 1.65 to 2.7 V and is 35 ns when V
IO
= 2.7 to 3.6 V
3. CE# does not need to go high between status bit reads
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
WE#
CE#
OE#
High Z
t
OE
High Z
DQ7
DQ6–DQ0
RY/BY#
t
BUSY
Complement
True
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
Status Data
Complement
Status Data
True
Valid Data
Valid Data
t
ACC
t
RC
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| S29GL128P11FAIR12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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| S29GL128P11FFI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11FFIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11FFIR12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P11FAIV10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 64BGA - Trays |
| S29GL128P11FAIV20 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 64BGA - Trays |
| S29GL128P11FF.IS4 | 制造商:Spansion 功能描述: |
| S29GL128P11FFI010 | 功能描述:閃存 128Mb 3V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P11FFI013 | 制造商:Spansion 功能描述:FLASH MEMORY - Tape and Reel |
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