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參數(shù)資料
| 型號： | S29GL128P11FAIR10 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 42/77頁 |
| 文件大?。?/td> | 2121K |
| 代理商： | S29GL128P11FAIR10 |
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42
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
8.
Advanced Sector Protection/Unprotection
The Advanced Sector Protection/Unprotection feature disables or enables programming or erase operations
in any or all sectors and can be implemented through software and/or hardware methods, which are
independent of each other. This section describes the various methods of protecting data stored in the
memory array. An overview of these methods in shown in
Figure 8.1
.
Figure 8.1
Advanced Sector Protection/Unprotection
Hardware Methods
Software Methods
WP#/ACC = V
IL
(Highe
s
t or Lowe
s
t
S
ector Locked)
P
ass
word Method
(DQ2)
Per
s
i
s
tent Method
(DQ1)
Lock Regi
s
ter
(One Time Progr
a
mm
ab
le)
PPB Lock Bit
1,2,
3
64-
b
it P
ass
word
(One Time Protect)
1 = PPB
s
Unlocked
0 = PPB
s
Locked
Memory Arr
a
y
S
ector 0
S
ector 1
S
ector 2
S
ector N-2
S
ector N-1
S
ector N
3
PPB 0
PPB 1
PPB 2
PPB N-2
PPB N-1
PPB N
Per
s
i
s
tent
Protection Bit
(PPB)
4,5
DYB 0
DYB 1
DYB 2
DYB N-2
DYB N-1
DYB N
Dyn
a
mic
Protection Bit
(DYB)
6,7,
8
6. 0 =
S
ector Protected,
1 =
S
ector Unprotected.
7. Protect effective only if PPB Lock Bit i
s
u
nlocked
a
nd corre
s
ponding PPB i
s
“1
”
(
u
nprotected).
8
. Vol
a
tile Bit
s
: def
au
lt
s
to
us
er choice
u
pon
power-
u
p (
s
ee ordering option
s
).
4. 0 =
S
ector Protected,
1 =
S
ector Unprotected.
5. PPB
s
progr
a
mmed individ
ua
lly,
bu
t cle
a
red collectively
1. Bit i
s
vol
a
tile,
a
nd def
au
lt
s
to
“
1
”
on re
s
et.
2. Progr
a
mming to
“
0
”
lock
s
a
ll PPB
s
to their
c
u
rrent
s
t
a
te.
3
. Once progr
a
mmed to
“
0
”
, re
qu
ire
s
h
a
rdw
a
re
re
s
et to
u
nlock.
3
. N = Highe
s
t Addre
ss
S
ector.
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|---|---|
| S29GL128P11FAIV10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 64BGA - Trays |
| S29GL128P11FAIV20 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 64BGA - Trays |
| S29GL128P11FF.IS4 | 制造商:Spansion 功能描述: |
| S29GL128P11FFI010 | 功能描述:閃存 128Mb 3V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P11FFI013 | 制造商:Spansion 功能描述:FLASH MEMORY - Tape and Reel |
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