- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359755 > S29GL128P11FAIR10 (SPANSION LLC) 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology PDF資料下載
參數(shù)資料
| 型號： | S29GL128P11FAIR10 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 60/77頁 |
| 文件大?。?/td> | 2121K |
| 代理商： | S29GL128P11FAIR10 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁當(dāng)前第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁
60
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
11.7.3
S29GL-P Erase and Program Operations
Notes
1. Not 100% tested.
2. See
Section 11.6
for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with
V
IO
= V
CC
= 2.7 V. AC specifications for 110 ns speed options are tested with V
IO
= 1.8 V and V
CC
= 3.0 V.
Table 11.6
S29GL-P Erase and Program Operations
Parameter
JEDEC
t
AVAV
t
AVWL
Description
Write Cycle Time
(Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
Output Enable High during toggle bit polling
Read Recovery Time Before Write (OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Write Buffer Program Operation (Notes
2
,
3
)
Effective Write Buffer Program Operation (Notes
2
,
4
)
Accelerated Effective Write Buffer Program Operation
(Notes
2
,
4
)
Program Operation
(Note 2)
Accelerated Programming Operation
(Note 2)
Sector Erase Operation
(Note 2)
V
HH
Rise and Fall Time
(Note 1)
V
CC
Setup Time
(Note 1)
Erase/Program Valid to RY/BY# Delay
Sector Erase Timeout
Speed Options
100
110
100
110
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
Std.
t
WC
t
AS
t
ASO
t
AH
t
AHT
t
DS
t
DH
t
CEPH
t
OEPH
t
GHWL
t
CS
t
CH
t
WP
t
WPH
90
90
120
120
130
130
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
0
15
45
0
30
0
20
20
0
0
0
35
30
480
15
t
WLAX
t
DVWH
t
WHDX
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHDL
t
WHWH1
t
WHWH1
Per Word
Per Word
Typ
13.5
μs
Word
Word
Typ
Typ
Typ
Min
Min
Max
Max
60
54
0.5
250
35
90
50
μs
μs
sec
ns
μs
ns
μs
t
WHWH2
t
WHWH2
t
VHH
t
VCS
t
BUSY
t
SEA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL128P11FAIR12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11FFI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11FFI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11FFIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11FFIR12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P11FAIV10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 64BGA - Trays |
| S29GL128P11FAIV20 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 64BGA - Trays |
| S29GL128P11FF.IS4 | 制造商:Spansion 功能描述: |
| S29GL128P11FFI010 | 功能描述:閃存 128Mb 3V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P11FFI013 | 制造商:Spansion 功能描述:FLASH MEMORY - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。