參數(shù)資料
型號: S29GL064N11BAIV12
廠商: Spansion Inc.
英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述: 64兆,32兆位3.0伏只頁面模式閃存具有110納米MirrorBit工藝技術(shù)
文件頁數(shù): 78/79頁
文件大小: 2191K
代理商: S29GL064N11BAIV12
78
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
18. Revision History
Section
Description
Revision 01 (February 12, 2007)
Initial release.
Revision 02 (February 26, 2007)
Global
Replaced LAE064 package with LAA064.
Page Mode Read
Corrected bit ranges in first paragraph.
Erase And Programming Performance
Modified maximum sector erase time in table.
Revision 03 (March 15, 2007)
Connection Diagrams
64-ball Fortified BGA (LAA 064) figure:
Changed inputs for balls F1 and F7.
Revision 04 (July 6, 2007)
Ordering Information
Removed regulated V
CC
range and replaced 90 ns with 110 ns for low V
IO
option
Added Note 4 to PACKAGE MATERIAL SET Standard option
Sector Addresses table
Corrected a table
TSOP Pin and BGA Package
Capacitance
Added values for TSOP
Revision 05 (August 10, 2007)
Ordering Information
Removed leaded parts
CFI Table
Altered Erase Block Region 1 & 2
Revision 06 (September 18, 2007)
Global
Change document status to Full Production
Removed 70ns access speed
Command Definitions (x16 mode) Table
Corrected addresses for Program operation
Command Definitions (x8 mode) Table
Corrected addresses for Program operation
Revision 07 (October 22, 2007)
Global
Removed VID (12V) Sector protect & unprotect features
Primary Vendor-Specific Extended
Query Table
Updated the data of CFI address 45hex
Revision 08 (November 2, 2007)
Primary Vendor-Specific Extended
Query Table
Updated the data of CFI address 2D hex thru 34 hex.
S29GL064N (Model 04) Bottom Boot
Sector Addresses Table
Updated S29GL064N (Model 04) Bottom Boot Sector Addresses
Revision 09 (November 16, 2007)
Erase and Program Operations Table
Changed t
DS
from 45 ns to 35 ns
相關(guān)PDF資料
PDF描述
S29GL064N11BAIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAIV62 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFI010 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064N11DAIV10 制造商:Spansion 功能描述:64M (4MX16) 3V REG, MIRRORBIT, - Trays
S29GL064N11DFIV10 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,BGA,64PIN,PLASTIC - Trays
S29GL064N11DFIV20 制造商:Spansion 功能描述:64M NOR FLASH - Trays
S29GL064N11FFIV10 功能描述:閃存 64Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N11FFIV20 制造商:Spansion 功能描述: