參數(shù)資料
型號(hào)： S29GL064N11BAIV12
廠商： Spansion Inc.
英文描述： 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述： 64兆，32兆位3.0伏只頁(yè)面模式閃存具有110納米MirrorBit工藝技術(shù)
文件頁(yè)數(shù)： 46/79頁(yè)
文件大小： 2191K
代理商： S29GL064N11BAIV12
46
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
Figure 10.2
Program Operation
Note
See
Table 10.1 on page 51
and
Table 10.3 on page 53
for program command sequence.
10.5
Program Suspend/Program Resume Command Sequence
The Program Suspend command allows the system to interrupt a programming operation or a Write to Buffer
programming operation so that data can be read from any non-suspended sector. When the Program
Suspend command is written during a programming process, the device halts the program operation within
20
μ
s maximum and updates the status bits. Addresses are not required when writing the Program Suspend
command.
After the programming operation is suspended, the system can read array data from any non-suspended
sector. The Program Suspend command may also be issued during a programming operation while an erase
is suspended. In this case, data may be read from any addresses not in Erase Suspend or Program Suspend.
If a read is needed from the Secured Silicon Sector area (One-time Program area), then user must use the
proper command sequences to enter and exit this region. Note that the Secured Silicon Sector, autoselect,
and CFI functions are unavailable when a program operation is in progress.
The system may also write the autoselect command sequence when the device is in the Program Suspend
mode. The system can read as many autoselect codes as required. When the device exits the autoselect
mode, the device reverts to the Program Suspend mode, and is ready for another valid operation. See
Autoselect Command Sequence
on page 42
for more information.
After the Program Resume command is written, the device reverts to programming. The system can
determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard
program operation. See
Write Operation Status
on page 55
for more information.
The system must write the Program Resume command (address bits are don’t care) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Resume command are
ignored. Another Program Suspend command can be written after the device resumes programming.
S
TART
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S
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D
a
t
a
Poll
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S
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Verify D
a
t
a
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Ye
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L
as
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Increment Addre
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相關(guān)PDF資料
PDF描述
S29GL064N11BAIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAIV62 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFI010 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
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S29GL064N11DFIV20 制造商:Spansion 功能描述:64M NOR FLASH - Trays
S29GL064N11FFIV10 功能描述:閃存 64Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N11FFIV20 制造商:Spansion 功能描述:
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