參數(shù)資料
型號(hào): S29GL064N11BAIV12
廠商: Spansion Inc.
英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述: 64兆,32兆位3.0伏只頁(yè)面模式閃存具有110納米MirrorBit工藝技術(shù)
文件頁(yè)數(shù): 38/79頁(yè)
文件大?。?/td> 2191K
代理商: S29GL064N11BAIV12
38
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
Note
CFI data related to V
CC
and time-outs may differ from actual V
CC
and time-outs of the product. Please consult the Ordering Information
tables to obtain the V
CC
range for particular part numbers. Please consult the Erase and Programming Performance table for typical timeout
specifications.
Table 9.2
System Interface String
Addresses (x16)
Addresses (x8)
Data
Description
1Bh
36h
0027h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
V
PP
Max. voltage (00h = no V
PP
pin present)
Reserved for future use
Typical timeout for Min. size buffer write 2
N
μs
(00h = not supported)
Typical timeout per individual block erase 2
N
ms
Typical timeout for full chip erase 2
N
ms (00h = not supported)
Max. timeout for byte/word program 2
N
times typical.
Max. timeout for buffer write 2
N
times typical
Max. timeout per individual block erase 2
N
times typical
Max. timeout for full chip erase 2
N
times typical
(00h = not supported)
1Eh
3Ch
0000h
1Fh
3Eh
0007h
20h
40h
0007h
21h
42h
000Ah
22h
44h
0000h
23h
46h
0003h
24h
48h
0005h
25h
4Ah
0004h
26h
4Ch
0000h
相關(guān)PDF資料
PDF描述
S29GL064N11BAIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAIV62 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFI010 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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