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參數(shù)資料
| 型號： | S29GL064N11BAIV12 |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| 中文描述： | 64兆，32兆位3.0伏只頁面模式閃存具有110納米MirrorBit工藝技術(shù) |
| 文件頁數(shù)： | 45/79頁 |
| 文件大?。?/td> | 2191K |
| 代理商： | S29GL064N11BAIV12 |
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November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
Flash Family
45
D a t a
S h e e t
Figure 10.1
Write Buffer Programming Operation
Notes
1. When Sector Address is specified, any address in the selected sector is acceptable. However, when loading Write-Buffer address
locations with data, all addresses must fall within the selected Write-Buffer Page.
2. DQ7 may change simultaneously with DQ5. Therefore, DQ7 should be verified.
3. If this flowchart location was reached because DQ5=
1
, then the device FAILED. If this flowchart location was reached because DQ1=
1
,
then the Write to Buffer operation was ABORTED. In either case, the proper reset command must be written before the device can begin
another operation. If DQ1=
1
, write the Write-Buffer-Programming-Abort-Reset command. if DQ5=
1
, write the Reset command.
4. See
Table 10.1 on page 51
and
Table 10.3 on page 53
for command sequences required for write buffer programming.
Write “Write to B
u
ffer
”
comm
a
nd
a
nd
S
ector Addre
ss
Write n
u
m
b
er of
a
ddre
ss
e
s
to progr
a
m min
us
1(WC)
a
nd
S
ector Addre
ss
Write progr
a
m
bu
ffer to
fl
as
h
s
ector
a
ddre
ss
Write fir
s
t
a
ddre
ss
/d
a
t
a
Write to
a
different
s
ector
a
ddre
ss
FAIL or ABORT
PA
SS
Re
a
d DQ7 - DQ0
a
t
L
as
t Lo
a
ded Addre
ss
Re
a
d DQ7 - DQ0 with
a
ddre
ss
= L
as
t Lo
a
ded
Addre
ss
Write next
a
ddre
ss
/d
a
t
a
p
a
ir
WC = WC - 1
WC = 0
P
a
rt of
“
Write to B
u
ffer
”
Comm
a
nd
S
e
qu
ence
Ye
s
Ye
s
Ye
s
Ye
s
Ye
s
Ye
s
No
No
No
No
No
No
A
b
ort Write to
B
u
ffer Oper
a
tion
DQ7 = D
a
t
a
DQ7 = D
a
t
a
DQ5 = 1
DQ1 = 1
Write to
bu
ffer ABORTED.
M
us
t write
“
Write-to-
bu
ffer
A
b
ort Re
s
et
”
comm
a
nd
s
e
qu
ence to ret
u
rn
to re
a
d mode.
(Note 2)
(Note
3
)
(Note 1)
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