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參數(shù)資料
| 型號(hào)： | PPXY8300A6T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | Pressure Sensor |
| 英文描述： | DIFFERENTIAL, PEIZORESISTIVE PRESSURE SENSOR, RECTANGULAR, SURFACE MOUNT |
| 封裝： | SOIC-20 |
| 文件頁(yè)數(shù)： | 77/162頁(yè) |
| 文件大?。?/td> | 4316K |
| 代理商： | PPXY8300A6T1 |
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MPXY8300 Series
Sensors
Freescale Semiconductor
21
A strictly monitored procedure must be obeyed or the command will not be accepted. This minimizes the possibility of any
unintended changes to the FLASH memory contents. The command complete flag (FCCF) indicates when a command is
complete. The command sequence must be completed by clearing FCBEF to launch the command. Figure 4-2 is a flowchart for
executing all of the commands except for burst programming. The FCDIV register must be initialized before using any FLASH
commands. This must be done only once following a reset.
Figure 4-2 FLASH Program and Erase Flowchart
4.6.4
Burst Program Execution
The burst program command is used to program sequential bytes of data in less time than would be required using the standard
program command. This is possible because the high voltage to the FLASH array does not need to be disabled between program
operations. Ordinarily, when a program or erase command is issued, an internal charge pump associated with the FLASH
memory must be enabled to supply high voltage to the array. Upon completion of the command, the charge pump is turned off.
When a burst program command is issued, the charge pump is enabled and then remains enabled after completion of the burst
program operation if these two conditions are met:
The next burst program command has been queued before the current program operation has completed.
The next sequential address selects a byte on the same physical row as the current byte being programmed. A row of
FLASH memory consists of 64 bytes. A byte within a row is selected by addresses A5 through A0. A new row begins
when addresses A5 through A0 are all zero.
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount of time to program as
a byte programmed in standard mode. Subsequent bytes will program in the burst program time provided that the conditions
above are met. In the case the next sequential address is the beginning of a new row, the program time for that byte will be the
standard time instead of the burst time. This is because the high voltage to the array must be disabled and then enabled again.
If a new burst command has not been queued before the current command completes, then the charge pump will be disabled
and high voltage removed from the array.
START
WRITE TO FLASH
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
NO
YES
FPVIOL OR
WRITE 1 TO FCBEF
TO LAUNCH COMMAND
AND CLEAR FCBEF (Note 2)
1
0
FCCF?
ERROR EXIT
DONE
Note 2: Wait at least four bus cycles
0
FACCERR?
CLEAR ERROR
FACCERR?
WRITE TO FCDIV (Note 1)
Note 1: Required only once after reset.
1
before checking FCBEF or FCCF.
FLASH PROGRAM AND
ERASE FLOW
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