394
CHAPTER 24 ELECTRICAL SPECIFICATIONS
User
’
s Manual U14701EJ3V0UD
Flash memory programming characteristics (T
A
= +10 to +40
°
C, V
DD
= 1.8 to 5.5 V):
μ
PD78F0338 only
(1) Write/erase characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Operating frequency
f
X
4.5 V
≤
V
DD
≤
5.5 V
1
10
MHz
2.7 V
≤
V
DD
< 4.5 V
1
5
1.8 V
≤
V
DD
< 2.7 V
1
1.25
V
DD
write supply current
Note
I
DDW
When
V
PP
= V
PP1
oscillation
10 MHz crystal V
DD
= 4.5 to 5.5 V
35
mA
operating mode
5 MHz crystal
oscillation
operating mode
V
DD
= 1.8 to 5.5 V
12
V
PP
write supply current
Note
I
PPW
When
V
PP
= V
PP1
oscillation
10 MHz crystal V
DD
= 4.5 to 5.5 V
39.5
mA
operating mode
5 MHz crystal
oscillation
operating mode
V
DD
= 1.8 to 5.5 V
16.5
V
DD
erase supply current
Note
I
DDE
When
V
PP
= V
PP1
oscillation
10 MHz crystal V
DD
= 4.5 to 5.5 V
35
mA
operating mode
5 MHz crystal
oscillation
operating mode
V
DD
= 1.8 to 5.5 V
12
V
PP
erase supply current
Note
I
PPE
When V
PP
= V
PP1
100
mA
Unit erase time
ter
0.5
1
1
s
Total erase time
tera
20
s
Number of rewriting times
C
WRT
Where erase and write make up 1 cycle
20
Times
V
PP
supply voltage
V
PP0
Normal operation mode
0
0.2V
DD
V
V
PP1
Flash memory program
9.7
10.0
10.3
V
Note
Excluding port current (including current flowing through on-chip pull-up resistor)
(2) Write operation characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
PP
set time
t
PSRON
V
PP
high voltage
1.0
μ
s
V
PP
↑
set time from V
DD
↑
t
DRPSR
V
PP
high voltage
1.0
μ
s
RESET
↑
set time from V
PP
↑
t
PSRRF
V
PP
high voltage
1.0
μ
s
V
PP
count start time from RESET
↑
t
RFCF
1.0
μ
s
Count execution time
t
COUNT
2.0
ms
V
PP
counter high-/low-level width
t
CH
, t
CL
8.0
μ
s
V
PP
counter noise elimination width
t
NFW
40
ns