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| 型號： | HYB18L256160B |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| 中文描述： | DRAM的針對移動應(yīng)用256兆移動RAM |
| 文件頁數(shù)： | 44/58頁 |
| 文件大?。?/td> | 1766K |
| 代理商： | HYB18L256160B |
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Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
44
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
2.4.10.1
DEEP POWER DOWN
The deep power down mode is an unique function on Low Power SDRAM devices with extremely low current consumption.
Deep power down mode is entered using the BURST TERMINATE command (cf.
Figure 35
) except that CKE is LOW. All
internal voltage generators inside the device are stopped and all memory data is lost in this mode. To enter the deep power
down mode all banks must be precharged.
The deep power down mode is asynchronously exited by asserting CKE HIGH. After the exit, the same command sequence
as for power-up initialization, including the 200μs initial pause, has to be applied before any other command may be issued (cf.
Figure 3
and
Figure 4
).
2.5
Function Truth Tables
This chapter contains the function truth tables.
TABLE 16
Current State Bank n - Command to Bank n
Current State
CS
RAS
CAS
WE
Command / Action
Note
Any
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
H
L
L
L
L
H
H
L
H
H
L
H
H
H
L
H
X
H
H
L
L
H
L
L
H
L
L
H
H
L
L
H
H
X
H
H
H
L
L
H
L
L
H
L
L
L
H
L
L
L
DESELECT (NOP / continue previous operation)
NO OPERATION (NOP / continue previous operation)
ACTIVE (select and activate row)
AUTO REFRESH
MODE REGISTER SET
PRECHARGE
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
READ (select column and start new READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE (truncate READ burst, start precharge)
BURST TERMINATE
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (truncate WRITE burst, start precharge)
BURST TERMINATE
1)2)3)4)5)6)
1) This table applies when CKEn-1 was HIGH and CKEn is HIGH and after
t
RC
has been met (if the previous state was self refresh).
2) This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown are those allowed
to be issued to that bank when in that state. Exceptions are covered in the notes below.
3) Current state definitions, see
Table 17
4) The following states must not be interrupted by a command issued to the same bank. DESELECT or NOP commands, or allowable
commands to the other bank should be issued on any clock edge occurring during these states. Allowable commands to the other bank
are determined by its current state and according to
Table 20
, see also
Table 18
.
5) The following states must not be interrupted by any executable command; DESELECT or NOP commands must be applied on each
positive clock edge during these states, see
Table 19
6) All states and sequences not shown are illegal or reserved.
7) Not bank-specific; requires that all banks are idle and no bursts are in progress.
8)
Same as NOP command in that state.
1)
to
6)
Idle
1)
to
6)
1)
to
7)
1)
to
7)
1)
to
6)
,
8)
Row Active
1)
to
6)
,
9)
1)
to
6)
,
9)
1)
to
6)
,
10)
Read
(Auto-Precharge
Disabled)
1)
to
6)
,
9)
1)
to
6)
,
9)
1)
to
6)
,
10)
1)
to
6)
,
11)
Write
(Auto-Precharge
Disabled)
1)
to
6)
,
9)
1)
to
6)
,
9)
1)
to
6)
,
10)
1)
to
6)
,
11)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160BCL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BCX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BF | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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