參數(shù)資料
型號(hào): HYB18L256160B
廠商: QIMONDA
英文描述: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
中文描述: DRAM的針對(duì)移動(dòng)應(yīng)用256兆移動(dòng)RAM
文件頁(yè)數(shù): 42/58頁(yè)
文件大?。?/td> 1766K
代理商: HYB18L256160B
Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
42
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
FIGURE 44
Self Refresh Entry and Exit
TABLE 15
Timing Parameters for AUTO REFRESH and SELF REFRESH
Parameter
Symbol
- 7.5
Units
Note
min.
max.
ACTIVE to ACTIVE command period
PRECHARGE command period
Refresh period (8192 rows)
Self refresh exit time
t
RC
t
RP
t
REF
t
SREX
67
19
1
64
ns
ns
ms
t
CK
1)
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:
no. of clock cycles = specified delay / clock period; round up to next integer.
1)
1)
1)
W
53
W
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W
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