參數(shù)資料
型號: HYB18L256160B
廠商: QIMONDA
英文描述: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
中文描述: DRAM的針對移動應(yīng)用256兆移動RAM
文件頁數(shù): 31/58頁
文件大小: 1766K
代理商: HYB18L256160B
Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
31
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
FIGURE 28
Random WRITE Bursts
Non-consecutive WRITE bursts are shown in
Figure 29
.
FIGURE 29
Non-Consecutive WRITE Bursts
%D $ &RO Q HWF %DQN $ &ROXPQ Q HWF
', Q HWF 'DWD ,Q WR FROXPQ Q HWF
%XUVW /H QJWK
LQ WKH FDVH VKRZQ EXUVWV DUH WHUPLQDWHG E\ FRQVHFXWLYH :5,7( FRPPDQGV
VXEVHTXHQW HOHPHQWV RI 'DWD ,Q DUH SURYLGHG LQ WKH SURJUDPPHG RUGHU IROORZLQJ ', P
'RQW &DUH
&/.
&RPPDQG
123
123
123
123
123
:5,7(
:5,7(
:5,7(
:5,7(
$G GUHVV
%D $
&RO [
&RO D
&RO Q
'4
', Q
', D
', [
', P
', P
', P
', P
%D $ &RO Q E %DQN $ &ROXPQ Q E
', Q E 'DWD ,Q WR FROXPQ Q E
%XUVW /H QJWK
LQ WKH FDVH VKRZQ
VXEVHTXHQW HOHPHQWV RI 'DWD ,Q DUH SURYLGHG LQ WKH SURJUDPPHG RUGHU IROORZLQJ ', Q E
'RQW &DUH
&/.
:5,7(
&RPPDQG
123
123
123
123
123
123
123
:5,7(
&RO Q
$G GUHVV
%D $
', E
'4
', Q
', Q
', Q
', Q
', E
', E
相關(guān)PDF資料
PDF描述
HYMP112S64LMP8-C4 DDR2 SDRAM SO-DIMM
HYMP112S64LMP8-C5 DDR2 SDRAM SO-DIMM
HYMP112S64LMP8-E3 BNC FEMALE TO RCA MALE COUPLER
HYMP112S64LMP8-E4 DDR2 SDRAM SO-DIMM
HYMP112S64MP8 SHIELDED, RJ45 TO DB25 ADP, P
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18L256160BC-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
HYB18L256160BC-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications
HYB18L256160BCL-7.5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYB18L256160BCX-7.5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYB18L256160BF 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications