參數(shù)資料
型號: HYB18L256160B
廠商: QIMONDA
英文描述: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
中文描述: DRAM的針對移動應(yīng)用256兆移動RAM
文件頁數(shù): 17/58頁
文件大?。?/td> 1766K
代理商: HYB18L256160B
Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
17
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
2.4.3
MODE REGISTER SET
The Mode Register and Extended Mode Register are loaded
via inputs A0 - A12 (see mode register descriptions in
Chapter 2.2
). The MODE REGISTER SET command can
only be issued when all banks are idle and no bursts are in
progress. A subsequent executable command cannot be
issued until
t
MRD
is met.
FIGURE 7
Mode Register Set Command
FIGURE 8
Mode Register Definition
TABLE 10
Timing Parameters for Mode Register Set Command
'RQW &DUH
&6
&.(
+LJK
&/.
$ $
&RGH
%$ %$
&RGH
:(
&$6
5$6
Parameter
Symbol
- 7.5
Units
Note
min.
max.
MODE REGISTER SET command period
t
MRD
2
t
CK
&RGH 0RGH 5HJLVWHU ([WHQGHG 0RGH 5HJLVWHU VHOHFWLRQ
%$
%$
DQG RS FRGH $
$
W
05'
'RQW &DUH
&/.
&RPPDQG
056
123
9DOLG
$G GUHVV
&RGH
9DOLG
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