參數(shù)資料
型號(hào)： HY27US08121B-TPIS
廠商： HYNIX SEMICONDUCTOR INC
元件分類： PROM
英文描述： 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48
封裝： 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
文件頁(yè)數(shù)： 8/40頁(yè)
文件大小： 360K
代理商： HY27US08121B-TPIS
Rev 0.5 / Jul. 2007
16
HY27US(08/16)12(1/2)B Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Parameter
Symbol
Min
Typ
Max
Unit
Valid Block Number
NVB
4016
4096
Blocks
Table 7: Valid Blocks Number
NOTE:
1. The 1st block is guaranteed to be a valid block up to 1K cycles with ECC. (1bit/528bytes)
Symbol
Parameter
Value
Unit
3.3V
TA
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
℃
Ambient Operating Temperature (Industrial Temperature Range)
-40 to 85
℃
TBIAS
Temperature Under Bias
-50 to 125
℃
Storage Temperature
-65 to 150
V
VIO(2)
Input or Output Voltage
-0.6 to 4.6
V
Vcc
Supply Voltage
-0.6 to 4.6
V
Table 8: Absolute maximum ratings
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
the device at these or any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27US08121M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
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HY27US08281A 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
HY27US08282A 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
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