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| 型號(hào)： | HY27US08121B-TPIS |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48 |
| 封裝： | 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 |
| 文件頁(yè)數(shù)： | 7/40頁(yè) |
| 文件大?。?/td> | 360K |
| 代理商： | HY27US08121B-TPIS |
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Rev 0.5 / Jul. 2007
15
HY27US(08/16)12(1/2)B Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
4. OTHER FEATURES
4.1 Data Protection for Power on/off Sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal
voltage detector disables all functions whenever Vcc is below about 2.0V(3.0V device). WP pin provides hardware pro-
tection and is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10us is
required before internal circuit gets ready for any command sequences as shown in Figure 22. The two-step command
sequence for program/erase provides additional software protection.
4.2 Ready/Busy.
The device has a Ready/Busy output that provides method of indicating the completion of a page program, erase,
copy-back and random read completion. The R/B pin is normally high and goes to low when the device is busy (after a
reset, read, program, erase operation). It returns to high when the internal controller has finished the operation. The
pin is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied.
Because pull-up resistor value is related to tr(R/B) and current drain during busy (Ibusy), an appropriate value can be
obtained with the following reference chart in Figure 23. Its value can be determined by the following guidance.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27US08121B-FIB | 64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63 |
| HY27US081G1MSES | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY27US081G1MTCS | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY27US081G1MTPMP | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY5116100BJ-70 | 16M X 1 FAST PAGE DRAM, 70 ns, PDSO24 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27US08121M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27US08122B | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27US081G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
| HY27US08281A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
| HY27US08282A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
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